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| AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet ChipSize:2500x1750m(100x69mils) ChipSizeTolerance:10m(0.4mils) ChipThickness:10010m(40.4mils) PadDimensions: 100x100m(40.4mils) Description TheAMMC-6430MMICisabroadbandnearly1Wpower amplifier designed for use in transmitters that operate invariousfrequencybandsbetween25GHzand33GHz. ThisMMICoptimizedforlinearoperationwithanoutput thirdorderinterceptpoint(OIP3)of37dBm.At30GHzit provides 29dBm of output power (P-1dB) and 17dB of gain.Thedevicehasinputandoutputmatchingcircuitry forusein50environments.TheAMMC-6430alsointegratesatemperaturecompensatedRFpowerdetection circuitthatenablespowerdetectionof0.3V/W.DCbiasis simpleandthedeviceoperatesonwidelyavailable5.5Vfor currentsupply(negativevoltageonlyneededforVg).Itis fabricatedinaPHEMTprocessforexceptionalpowerand gainperformance.Forimprovedreliabilityandmoisture protection,thedieispassivatedattheactiveareas. Features * Widefrequencyrange:25-33GHz * Highgain:17dB * Power:@30GHz,P-1dB=29dBm * Highlylinear:OIP3=37dBm * IntegratedRFpowerdetector * 5.5Volt,-0.7Volt,900mAoperation Applications * MicrowaveRadiosystems * SatelliteVSATandDBSsystems * LMDS&Pt-PtmmWLongHaul * 802.16&802.20WiMaxBWA * WLLandMMDSloops * Commercialgrademilitary * CanbedrivenbyAMMC-6345,increasingludingoverall gain. AMMC-6430 Absolute Maximum Ratings[1] Symbol Vd Vg Id Pin Tch Tstg Parameters/Conditions PositiveDrainVoltage GateSupplyVoltage DrainCurrent CWInputPower OperatingChannelTemp. StorageCaseTemp. Units V V mA dBm C C -65 -3 Min. Max. 7 0.5 1500 23 +150 +150 +300 Tmax MaximumAssemblyTemp(60secmax) C Note: 1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice. Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices AMMC-6430 DC Specifications/Physical Properties [1] Symbol Id Parameters and Test Conditions DrainSupplyCurrent (underanyRFpowerdriveandtemperature) (Vd=5.0V,VgsetforIdTypical) GateSupplyOperatingVoltage (Id(Q)=900(mA)) ThermalResistance[2] (Backsidetemperature,Tb=25C) Units mA Min. Typ. 900 Max. 1000 Vg qch-b V C/W -0.9 -0.7 9 -0.55 Notes: 1. AmbientoperationaltemperatureTA=25Cunlessotherwisenoted. 2. Channel-to-backsideThermalResistance(ch-b)=10C/WatTchannel(Tc)=107Casmeasuredusinginfraredmicroscopy.ThermalResistance atbacksidetemperature(Tb)=25Ccalculatedfrommeasureddata. AMMC-6430 RF Specifications [3, 4, 5] TA=25C,Vd=5.5V,Id(Q)=900mA,Zo=50 Symbol Gain P-1dB P-3dB OIP3 Parameters and Test Conditions Small-signalGain[4] OutputPowerat1dB GainCompression OutputPowerat3dB GainCompression ThirdOrderIntercept Point;Df=100MHz; Pin=-20dBm InputReturnLoss[4] OutputReturnLoss[4] Min.ReverseIsolation Units dB dBm dBm dBm Minimum 14 27 Typical 17 28.5 29 37 Maximum Sigma 0.5 0.38 0.35 0.8 RLin RLout Isolation dB dB dB -15 -15 -43 0.92 0.63 1.8 Notes: 3. Small/Large-signaldatameasuredinwaferformTA=25C. 4. 100%on-waferRFtestisdoneatfrequency=27,29,and32GHz.Statisticsbasedon1500partsample 5. Specificationsarederivedfrommeasurementsina50testenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera morenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. LSL LSL LSL 1 1. 1 1. 1 1. 1 1. 18 18. 8 9 8 Gain at 29 GHz P-1dB at 29 GHz P-1dB at 33 GHz TypicaldistributionofSmallSignalGainandOutputPower@P-1dB.Basedon1500partsampledoverseveralproductionlots. AMMC-6430 Typical Performances (TA = 25C, Vd =5.5 V, ID = 900 mA, Zin = Zout = 50 ) NOTE:Thesemeasurementsareina50testenvironment.Aspectsoftheamplifierperformancemaybeimproved overamorenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. S1[dB] S1[dB] 0 10 0 - S11[dB] S[dB] P-1 PAE 0 P-1 [dBm], PAE [%] Return Loss [dB] -10 S1[dB] S1 [dB] 1 -10 -1 -0 - 10 -0 0 1 0 1 0 0 Frequency [GHz] -0 0 -0 1 0 0 Frequency [GHz] 0 10 8 0 Frequency [GHz] Figure 1. Typical Gain and Reverse Isolation Figure 2. Typical Return Loss (Input and Output) Figure 3. Typical Output Power (@P-1dB) and PAE 10 0 Pout(dBm) Po[dBm], and, PAE[%] 0 0 1 10 PAE[%] Id(total) 10 8 110 Noise Figure [dB] IP [dBm] 8 100 90 0 8 0 Frequency [GHz] 0 8 0 Frequency [GHz] 0 -10 - 0 10 Pin [dBm] 1 0 80 Figure 4. Typical Noise Figure Figure 5. Typical Output 3rd Order Intercept Pt. Figure 6. Typical Output Power, PAE, and Total Drain Current versus Input Power at30GHz 0 S11_0 S11_-0 S11_8 0 S_0 S_-0 S_8 0 S1_0 S1_-0 S1_8 - - S11[dB] -10 S[dB] S1[dB] -10 0 -1 -1 1 -0 -0 - 1 0 0 Frequency[GHz] 0 - 1 0 0 Frequency[GHz] 0 10 1 0 0 Frequency[GHz] 0 Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature Figure 9. Typical Gain over temperature Ids [mA] 0 0 8 P-1 [dBm] 0 P-1_8deg P-1_0deg P-1_-0deg 8 0 Frequency [GHz] Figure 10. Typical One dB Compression over temperature Typical Scattering Parameters [1], (TA = 25C, Vd =5.5 V, ID = 900 mA, Zin = Zout = 50 ) S11 Freq GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 dB -5.91 -6.57 -7.18 -7.75 -8.35 -9.21 -9.81 -10.49 -10.90 -11.38 -13.19 -14.34 -15.81 -17.43 -17.52 -21.12 -26.33 -24.36 -19.96 -19.75 -25.24 -26.81 -23.34 -22.06 -18.80 -17.57 -21.76 -23.11 -18.05 -15.25 -14.11 Mag 0.51 0.47 0.44 0.41 0.38 0.35 0.32 0.30 0.29 0.27 0.22 0.19 0.16 0.13 0.13 0.09 0.05 0.06 0.10 0.10 0.05 0.05 0.07 0.08 0.11 0.13 0.08 0.07 0.13 0.17 0.20 Phase S21 dB Mag 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.09 0.36 1.11 2.48 3.89 5.63 6.97 6.96 6.72 6.59 6.52 6.53 6.83 7.28 7.31 7.11 6.51 6.12 4.97 3.40 2.08 1.12 0.62 0.33 Phase -150.08 177.71 159.58 144.22 127.82 131.62 174.87 -173.40 146.31 86.03 12.36 -59.81 -128.14 160.79 96.24 39.34 -11.71 -61.96 -110.13 -159.96 145.89 92.90 34.67 -21.77 -80.57 -147.31 147.08 87.01 33.30 -13.03 -54.38 165.15 -38.73 148.07 -38.15 132.45 -38.84 116.37 -38.40 102.02 -35.23 89.97 76.63 65.83 53.72 38.47 26.38 19.22 11.11 8.99 -4.76 -14.59 -16.19 37.91 25.90 16.45 8.60 19.45 52.06 55.38 38.20 22.77 12.34 58.33 65.65 48.45 38.60 -35.73 -35.32 -21.06 -8.97 0.91 7.87 11.79 15.01 16.86 16.85 16.54 16.37 16.28 16.29 16.69 17.24 17.27 17.04 16.27 15.73 13.93 10.64 6.34 0.98 -4.18 -9.56 S12 dB -46.83 -47.99 -45.28 -44.76 -48.37 -48.26 -44.88 -48.33 -49.40 -46.28 -50.99 -48.99 -49.75 -49.86 -46.73 -45.27 -40.96 -42.37 -40.26 -42.17 -40.05 -44.07 -41.80 -41.87 -45.35 -44.88 -43.93 -39.80 -39.89 -39.87 -41.33 Mag 4.56E-03 3.99E-03 5.44E-03 5.78E-03 3.82E-03 3.86E-03 5.70E-03 3.83E-03 3.39E-03 4.85E-03 2.82E-03 3.55E-03 3.26E-03 3.21E-03 4.61E-03 5.45E-03 8.96E-03 7.62E-03 9.71E-03 7.79E-03 9.95E-03 6.26E-03 8.13E-03 8.07E-03 5.40E-03 5.70E-03 6.36E-03 1.02E-02 1.01E-02 1.02E-02 8.59E-03 Phase -163.93 161.86 162.25 127.45 114.36 99.54 76.35 66.69 62.63 90.04 85.49 59.91 65.89 101.47 79.40 80.30 82.13 68.87 49.68 47.32 32.17 27.80 27.52 29.56 9.23 28.68 69.74 47.20 23.04 16.72 38.69 S22 dB -4.57 -5.15 -5.83 -7.10 -5.96 -6.74 -7.98 -9.74 -12.08 -15.37 -20.54 -33.57 -27.13 -20.75 -17.92 -19.27 -23.28 -29.28 -23.52 -22.46 -24.92 -31.37 -27.49 -20.47 -19.49 -18.86 -18.79 -19.84 -20.37 -19.65 -19.65 Mag 0.59 0.55 0.51 0.44 0.50 0.46 0.40 0.33 0.25 0.17 0.09 0.02 0.04 0.09 0.13 0.11 0.07 0.03 0.07 0.08 0.06 0.03 0.04 0.09 0.11 0.11 0.12 0.10 0.10 0.10 0.10 Phase 164.28 144.68 125.30 109.48 93.30 66.48 42.81 19.70 -2.59 -23.98 -43.76 -36.06 58.91 56.63 20.33 -3.94 -27.01 -9.02 26.76 16.30 -25.48 -70.15 124.04 87.29 57.42 45.83 42.27 33.52 37.79 38.29 41.26 Note: 1. Dataobtainedfromon-wafermeasurements. Biasing and Operation TherecommendedquiescentDCbiasconditionforoptimum efficiency, performance, and reliability is Vd=5 voltswithVgsetforId=950mA.Minorimprovementsin performancearepossibledependingontheapplication. Thedrainbiasvoltagerangeis3to5.5V.AsingleDCgate supplyconnectedtoVgwillbiasallgainstages.Muting can be accomplished by setting Vg and /or Vg to the pinch-offvoltageVp. An optional output power detector network is also provided.The differential voltage between the Det-Ref andDet-OutpadscanbecorrelatedwiththeRFpower emergingfromtheRFoutputport.Thedetectedvoltage isgivenby: V = ( ref - Vdet )- Vofs V Assembly Techniques ThebacksideoftheMMICchipisRFground.Formicrostrip applicationsthechipshouldbeattacheddirectlytothe groundplane(e.g.circuitcarrierorheatsink)usingelectricallyconductiveepoxy[1] Forbestperformance,thetopsideoftheMMICshouldbe broughtuptothesameheightasthecircuitsurrounding it.This can be accomplished by mounting a gold plate metalshim(samelengthandwidthastheMMIC)under thechipwhichisofcorrectthicknesstomakethechip and adjacent circuit the same height. The amount of epoxyusedforthechipand/orshimattachmentshould bejustenoughtoprovideathinfilletaroundthebottom perimeterofthechiporshim.Thegroundplainshould be free of any residue that may jeopardize electrical or mechanicalattachment. ThelocationoftheRFbondpadsisshowninFigure12. NotethatalltheRFinputandoutputportsareinaGroundSignalconfiguration. RFconnectionsshouldbekeptasshortasreasonableto minimize performance degradation due to undesirable seriesinductance.Asinglebondwireisnormallysufficient forsignalconnections,howeverdoublebondingwith0.7 mil gold wire or use of gold mesh [2] is recommended forbestperformance,especiallynearthehighendofthe frequencyband. Thermosonicwedgebondingispreferredmethodforwire attachmenttothebondpads.Goldmeshcanbeattached usinga2milroundtrackingtoolandatoolforceofapproximately22gramsandaultrasonicpowerofroughly 55dBforadurationof76+/-8mS.Theguidedwedgeat anuntrasonicpowerlevelof64dBcanbeusedfor0.7mil wire.Therecommendedwirebondstagetemperatureis 150+/-2C. CautionshouldbetakentonotexceedtheAbsoluteMaximumRatingforassemblytemperatureandtime. Thechipis100umthickandshouldbehandledwithcare. ThisMMIChasexposedairbridgesonthetopsurfaceand shouldbehandledbytheedgesorwithacustomcollet (donotpickupthediewithavacuumondiecenter). This MMIC is also static sensitive and ESD precautions shouldbetaken. Notes: [1] Ablebond84-1LM1silverepoxyisrecommended. [2] Buckbee-MearsCorporation,St.Paul,MN,800-262-3824 where Vref isthevoltageatthe DET _ R port,Vdet isavoltageatthe DET _ O port,and Vofs isthezero-input-power offsetvoltage.Therearethreemethodstocalculate: 1. Vofs canbemeasuredbeforeeachdetectormeasure- ment(byremovingorswitchingoffthepowersource and measuring ).This method gives an error due to temperaturedriftoflessthan0.01dB/50C. 2. Vofs canbemeasuredatasinglereferencetemperature. Thedrifterrorwillbelessthan0.25dB. 3. Vofs caneitherbecharacterizedovertemperatureand storedinalookuptable,oritcanbemeasuredattwo temperaturesandalinearfitusedtocalculateatany temperature.Thismethodgivesanerrorclosetothe method#1. TheRFportsareACcoupledattheRFinputtothefirststage andtheRFoutputofthefinalstage.Nogroundwiredare neededsincegroundconnectionsaremadewithplated through-holestothebacksideofthedevice. DET_R Vg Vd DQ DET_O RFout RFin Three stage 0.W power amplifier Figure 11. AMMC-6430 Schematic Figure 12. AMMC-6430 Bonding pad locations V g (Optional ) 0.1F 8 pF Vd 0.1F Vg Vd DET_O RFOutput AMMC-0 Vd RFInput RFI RFO DET_R Vg 0.1F 8 pF Vd 0.1F Notes: 1. 1F capacitors on gate and drain lines not shown required. . Vg connection is recommended on both sides for devices operating at or above P1dB. Vg Figure 13. AMMC-6430 Assembly diagram Vd 0.35 0.3 Det_R - Det_O [V] 0.25 0.2 0.15 0.1 0.05 0 5 10 15 20 25 Pout[dBm] 30 35 1 Ordering information: AMMC-6430-W10=10devicespertray AMMC-6430-W50=50devicespertray 0.1 0.01 0.001 Figure 14. AMMC-6430 Typical Detector Voltage and Output Power, Freq=30 GHz For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. 5989-3936EN - April 12, 2006 Det_R - Det_O [V] |
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