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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB541 DESCRIPTION *With TO-3 package *High power dissipation APPLICATIONS *For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -110 -110 -6 -8 -3 80 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage CONDITIONS IC=-50mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-110V; IE=0 MIN -110 -110 -6 2SB541 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO TYP. MAX UNIT V V V -1.5 V Collector cut-off current -0.1 mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V 40 9 -0.1 200 mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB541 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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