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The high power HVV1214-075 device is a high The high power HVV1011-040 device is a high HVV1214-075 designed for L-Band pulsed mode RF transistor DESCRIPTION PaCKaGE voltage silicon enhancementavionics applications voltage silicon enhancement mode RFis The high over the frequency range from a high power HVV1011-040 device transistor operating for L-Band pulsed radar applications L-Band Radar Pulsed Power Transistor DESCRIPTION L-Band pulsed avionics applications PACKAGE designed for designed voltage The high power HVV1011-035 device is a high voltage 1030MHz silicon enhancement mode RF transistor 1090MHz. operating toover the frequency range from from operating over the frequency range 1200-1400 MHz, 200s Pulse, 10% Duty designed for L-Band pulsedtransistor designed for avionics applications silicon enhancement modedevice is a high 1.2GHz to 1.4GHz. The high power HVV1011-040 RF 1030MHz over the frequency range from operating to 1090MHz. L-Band pulsed 1090MHz. voltage1030MHz to avionics applications operating over silicon enhancement mode RF transistor FEATURES designed for L-Band pulsed avionics applications theFEATURES from 1030MHz to 1090MHz. frequency range FEATURES operating over the frequency range from The device resides in a Surface Mount Package * High Power Gain 1030MHz to 1090MHz. FEATURES Ruggedness DESCRIPTION Gain with a ceramic lid. The SM200 package style is * High Power Excellent The device resides in * High Power Gain FEaTURES Ruggedness PACKAGEgross leak a Surface Mount Package qualified for test - MIL-STD-883, * Excellent 48V Supply Voltage with a ceramic lid. The SM200 Mount Package * Excellent Ruggedness The device resides in a Surface package style is * power Gain High HVV1214-075 device is a high Method 1014. The High48V Supply Voltage high PowerPower Gain ** FEATURES 48V Supply Voltage qualified for gross The SM200 package style with a ceramic lid. leak test - MIL-STD-883, is * Excellent Ruggedness voltage silicon enhancement mode RF transistor ABSOLUTESupply VoltageRATINGS MAXIMUM * Excellent Ruggedness Method for gross leak test - MIL-STD-883, qualified1014. * for L-Band pulsed radar applications 48V designed The device resides in a Surface Mount Package * ABSOLUTE Voltage High Power Gain * 48V Supply MAXIMUM RATINGS from Method 1014. ABSOLUTE the frequency range operating over MAXIMUM RATINGS RUGGEDNESS The device resides in a SM200 package style is with with a ceramic lid. The Surface Mount Package * Excellent Ruggedness 1.2GHz to Parameter 1.4GHz. The device resides in a two-lead metal flanged ABSOLUTE MAXIMUM RATINGS Unit Value * SymbolSupply Voltage 48V aqualifiedRUGGEDNESS - MIL-STD-883, The for ceramic for gross SM200 crystal polymer lid. lid. The leak test package style is package with liquid device is capable qualified aBSOLUTE MaXIMUM 105 Symbol Drain-Source Voltage RaTINGSUnit Parameter Value The HVV1011-040 VDSS V Method 1014. MIL-STD-883, Method 1014. of gross leakRUGGEDNESS qualified for gross leak test - Symbol Parameter Value Unit HV400 package style is load mismatch V Drain-Source Voltage 105 withstanding an output VFEATURES Gate-Source VV GS DSS The MIL-STD-750D, Method 1071.6, ABSOLUTE MAXIMUM Voltage 10 VDSS Drain-Source Voltage 105 V test - HVV1011-040 device is capable of Test Symbol Drain CurrentRATINGS10 Parameter Unit corresponding to a 20:1 VSWR over all phase V Gate-Source Voltage 2 Value AV IDSXGS withstanding an output load mismatch VDSS Gate-Source Voltage 10 V Condition C. rated output power and operating The HVV1011-040 device is capable of 2GS 95 V Drain-Source 105 V angles and 8 A PDIDSX HighDrain CurrentVoltage 116 Power Dissipation W RUGGEDNESS to a 20:1 VSWR over all phase Power Gain corresponding IDSX Drain Current 2 A withstanding the frequency mismatch VGS2 Gate-Source Voltage 10 to V voltage across an output load band of operation. Power Dissipation 250 W TSPDParameter Storage Temperature -65 Unit C angles and rated output VSWR and all phase SymbolPD2 Excellent Ruggedness Value 116 RUGGEDNESS to a 20:1 power overoperating Power Dissipation W corresponding ITS Drain Current 2 A Storage Temperature +200 to -65 C RUGGEDNESS is capable of DSX Supply The HVV1011-040 rated output power and of operation. voltage across the VDSS Drain-Source Voltage V 2 TD1,2 48V Power Voltage 105 Storage Temperature +200 -65 to C angles and device frequency band operating PS 116 W JunctionDissipation 200 V C Symbol Units The HVV1011-035Parameter frequency band of operation. device is capable of withstanding an withstanding an output load Test Condition Max mismatch VGS TJ Gate-Source Voltage 10 +200 voltage across the 1 T Junction C TSJ Storage Temperature 200 to -65 C F = 1090 MHz 20:1 VSWR Temperature TheLMTmismatch corresponding to phase is corresponding to a Load 20:1 device Condition 20:1 of at output loadHVV1214-075 VSWR over all capableVSWR Units a IDSX ABSOLUTE MAXIMUM 2 A TJ Drain Current Junction 200 C Symbol Parameter Test Max RATINGS Temperature +200 withstanding output output 1090 MHz load mismatch VSWR angles and rated Mismatchoutput = power and 20:1 PD2 Power Dissipation 116 W all phase angles and an power and operatingoperating rated LMT1 Load F Temperature Tolerance TJ Junction 200 C correspondingMismatch VSWR over to in a phase The across residesa 20:1 Test Condition flanged Units device voltageSymbol theParameter two-lead metalall Max frequency operation. TS Storage CHARACTERISTICS voltage across 1therated output band ofand lid. 20:1 VSWR frequency band of operation The THERMALTemperature -65 to C LMT Load Temperature angles with Tolerance F polymer operating power packageand liquid crystal = 1090 MHz Symbol Parameter Unit +200 Value Mismatch voltage across the frequency band of HV400 package style is qualified for gross leak THERMAL CHARACTERISTICS V VDSS Drain-Source Voltage 105C TJ Junction 200 Symbol Parameter Test Condition Max Units Tolerance THERMaL CHaRaCTERISTICS Unit operation. test - MIL-STD-750D, Method 1071.6,VSWR Test THERMAL CHARACTERISTICS VGS Gate-Source Voltage Max 10 Symbol Parameter LMT1 Load F = 1090 MHz 20:1 1060MHz Temperature THERMAL CHARACTERISTICS V Condition C. Symbol Mismatch Parameter Test Condition Max Units IDSX Drain Current 8 A Thermal Resistance 1.5 C/W Symbol Parameter Unit Symbol Power Dissipation Parameter Max Unit LMT1 Load POUT = 75W 20:1 VSWR Tolerance PD2 1 250 W Thermal Resistance 1.5 C/W Mismatch Thermal Resistance 0.70 C/W THERMAL CHARACTERISTICS -65 to C Symbol Storage Temperature Parameter Max Unit TSJC F RUGGEDNESS = 1400MHz Tolerance ELECTRICAL CHARACTERISTICS C/W Thermal Resistance 1.5 +200 TJELECTRICaL CHaRaCTERISTICS Junction 200 C The HVV1214-075 device is capable of SymbolELECTRICAL CHARACTERISTICS Parameter Max Unit ELECTRICAL CHARACTERISTICS Temperature withstanding an output load mismatch Thermal Resistance 1.5 C/W ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Typ Units corresponding to a 20:1 VSWR over all phase 102 2mA VBR(DSS) Drain-Source Breakdown ConditionsVGS=0V,ID=1mA 110Units V Symbol Parameter Typ angles and rated output power Typ operating and Symbol Parameter Conditions Units <25 IDSS Drain Leakage Current VGS=0V,VDS=48V <10 ELECTRICAL CHARACTERISTICS voltage across the 110 frequencyV band !A of VBR(DSS) Drain-Source Breakdown VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA VGS=0V,ID=1mA 110 VUnits Symbol Parameter Current Conditions Typ IGSS Gate Leakage VGS=5V,VDS=0V !A operation. IDSS VGS=0V,VDS=48V <10 <1 A THERMAL Drain Leakage Current CHARACTERISTICS I1 Drain Leakage Current VGS=0V,VDS=48V <10 !A DSS Drain-Source Breakdown VGS=0V,ID=1mA V GVBR(DSS) Power GainCurrent POUT=35W,F=1060MHz Test Condition 110 Max 20 A dB P IGSS GateGate Leakage Current Leakage VGS=5V,VDS=0V <1 Symbol Parameter Units IGSS VGS=5V,VDS=0V <1 !A 1 IDSS Drain Leakage Current VGS=0V,VDS=48V <10 !A IRL Input POUT=35W,F=1060MHz dB Symbol ParameterGain Max Unit =75W,F=1200MHz,1400MHz POUT =21 LMT1 Load 75W 8 20dB Units VSWR 20:1 GP1 Power POUT Conditions =35W,F=1060MHz SymbolGP1 Parameter Return Loss Typ Power Gain POUT dB 1 IGSS Gate Leakage VGS=5V,VDS=0V <1 !A Drain Efficiency 0.70 POUT=35W,F=1060MHz % Mismatch Thermal Resistance Current C/W JC IRL11 1 Input Return Loss Loss POUT=75W,F=1200MHz,1400MHz F = 1400MHz52 dB V 9110 VBR(DSS) IRL Drain-Source Return VGS=0V,ID=1mA Input Breakdown POUT=35W,F=1060MHz 8 dB OUT=35W,F=1060MHz G1 Power Gain P 20 dB 1P Tolerance POUT=35W,F=1060MHz dB Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 IDSS PD 1 Drain Pulse Droop Leakage Current VGS=0V,VDS=48V <10 <0.2 !A D Drain Return Loss Efficiency POUT=35W,F=1060MHz 52% % OUT=35W,F=1060MHz IRL Input P 8 dB 1 Pulse DroopCurrent POUT=75W,F=1200MHz,1400MHz <0.6 dB IGSS 1 PD 1 Gate LeakageDroop VGS=5V,VDS=0V <1 PD Pulse Efficiency POUT=35W,F=1060MHz <0.2 !A dB OUT=35W,F=1060MHz Drain P 52 % All parameters measured under pulsed conditions at 35W output power under pulsed 15mA with the Conditions: ELECTRICAL CHARACTERISTICS GP1 1Under1Pulse Power Gain Pulse Width = 50 sec, Pulse Duty Cycle = 5% at VDD = 48V, IDQ = conditionsdB POUT=35W,F=1060MHz 20 PD width = 50!sec, duty Pulse Width = 200sec, Pulse OUT=35W,F=1060MHz VDD = 48V, <0.2 test fixture. Pulse Droop P IDQ = 15mA in a broadband matched = 50mAdB pulse 2 1.) Under Pulse Return Loss = 10% at IDQ dB 1 IRL1Rated at TCASE = Conditions: cycle = 5% and VDDP= 48V, Duty Cyclepower under pulsed conditions with the Input25C 8 OUT at 35W output 2 All parameters measured under pulsed conditions =35W,F=1060MHz Rated at TCASE 25C 2.) Rated at T= =Efficiency CASE = 25C Drain POUT 52 1 pulse 50!sec, Symbolwidth Parameter duty cycle pulsed and VDD ==35W,F=1060MHz in under pulsed matched% with the Conditions48V, IDQ = 15mA Typ Unitstest fixture. All parameters measured under = 5% conditions at 35W output power a broadband conditions 2 PD1 Vpulse widthCASE Droop duty cycle = 5% and VDD ==35W,F=1060MHz in a broadband matcheddB fixture. POUT 48V, IDQ <0.2 Rated at Pulse50!sec, T Drain-Source Breakdown = 25C VGS=0V,ID=1mA = 15mA 110 V = test BR(DSS)
DESCRIPTION DESCRIPTION DESCRIPTION PACKAGE PACKAGE The high power HVV1011-040 device is for TCAS and Mode-S Applications a high DESCRIPTION PACKAGE voltage silicon enhancement mode RF transistor
HVV1011-040 HVV1214-075 Pulsed Power Transistor L-Band Avionics HVV1011-040 The innovative Semiconductor Company! Pulsed Power Transistor HVV1011-040 50!s Pulse, 5% Transistor L-Band Radar 1030-1090MHz, Pulsed Power Duty L-Band Avionics L-Band Avionics 50!sPulse, 10% Duty 1200-1400 MHz, 200s Duty 1030-1090MHz, Pulsed Power Transistor HVV1011-035 PRODUCT OVERVIEW Pulse, 5% HVV1011-040 1030-1090MHz, 50!s Pulse, 5% Duty L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor PACKAGE 1030-1090MHz, 50!s Pulse, 5% Duty 1030-1090MHz, 50s Pulse, 5% Duty
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OUT Phoenix, 51 St. Suite 100 Az. st (c) 2008HVVi Semiconductors, Inc. Confidential Reserved.9 HVVi Semiconductors, Inc. All Rights 10235 S.S. 5185044 1 10235 St. (c) 2008 For HVVi Semiconductors,All Rights Reserved. 44 HVVi Semiconductors, Inc. visit:Confidential Phoenix,Semiconductors, Inc. HVVi AZ. 85044Suite 100 additional information, Inc. www.hvvi.com Drain POUT=75W,F=1200MHz,1400MHz D Phoenix, Az. 85044 Efficiency (c) 2008 HVVi Semiconductors, Inc. AllAll Rights Reserved. Rights Reserved. Phoenix, 51st St. Suite 100 (c) 2008 HVVi Semiconductors, Inc. Confidential 10235 S. Az. 85044 Droop HVVi Semiconductors, Inc. PD1 Pulse POUT=75W,F=1200MHz,1400MHz <0.6 Phoenix, Az. 85044 (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com
2 IDSS Drain 25C VGS=0V,VDS=48V Rated at TCASE = Leakage Current All parameters measured Inc. IGSS Gate Leakage pulsed For additional information, power under pulsed VGS=5V,VDS=0V HVVi Semiconductors, under Currentconditions at 35W outputvisit: www.hvvi.com For =75W,F=1200MHz,1400MHz HVVi Semiconductors, Gain Inc. pulse width = 50!sec, duty cycle = 5% and VDD P additional information: a broadband 15mA in GP1 S. 51st St.Power Inc. OUT 10235 Semiconductors,100 Suite HVVi= 48V, IDQ = visit: www.hvvi.com Semiconductors, Inc. Confidential 2 HVVi S. Semiconductors, For additional information, visit www.hvvi.com For 429-HVVi (4884) or RatedHVVi 51st St. Input 100Inc. Loss Tel: (866)additional information, visit: www.hvvi.com at1 = Suite 10235TCASE st 25C Return IRL P =75W,F=1200MHz,1400MHz
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<10 A conditions with the <1 A EG-01-PO01X1 matched test fixture. 21 dB EG-01-PO01X6
5/09/08 EG-01-PO08X1 EG-01-PO01X1 10/13/08 5/23/08 1 5/09/08 1 EG-01-PO01X1 1 1 5/09/08 1 EG-01-PO01X1
The innovative Semiconductor Company!
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L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50s Pulse, 5% Duty for TCAS and Mode-S Applications
HVV1011-040 L-Band Avionics Pulsed Power Transistor HVV1011-035 PRODUCT OVERVIEW 1030-1090MHz, 50!s Pulse, 5% Duty
PACKAGE DIMENSIONS
PaCKaGE DIMENSIONS
DRAIN
SOURCE
The innovative Semiconductor Company!
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Note: Drawing is not actual size.
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under HVVi Semiconductors, Inc. (HVVi) rights, including any patent rights. The HVVi name and logothis any HVVi intellectual property reserves the right to make changes to information published in are document at any time and without notice. This document supersedes and replaces all information trademarks of HVVi Semiconductors, Inc. supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.
For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO01X6 10/13/08 2 EG-01-PO01X1 5/09/08 2

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