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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 80 Volts CURRENT 0.5 Ampere CHT1198PT FEATURE * Small surface mounting type. (SOT-23) * Low Collector-Emitter saturation voltage. * High breakdown voltage. SOT-23 .041 (1.05) .033 (0.85) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) * PNP Silicon Transistor (3) (2) MARKING * J22 @hFE as Q Grade * J23 @hFE as R Grade .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1)B C (3) .045 (1.15) .033 (0.85) E (2) .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature junction temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. MAX. -80 -80 -5 -0.5 200 +150 150 V V V A mW C C 2007-7 UNIT RATING CHARACTERISTIC CURVES ( CHT1198PT ) ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise noted. SYMBOL BVCBO BVCEO BV EBO ICBO IEBO hFE VCEsat Cc fT PARAMETER CONDITIONS MIN. -80 -80 -5 - - 120 - - - - - - -500 -500 390 -500 11Typ. 180Typ. mV pF MHz MAX. V V V nA nA UNIT collector-base breakdown voltage IE = 0; IC =-50 uA collector-emitter breakdown voltage IB = 0; IC =-2 mA emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 0; IE =-50 uA IE = 0; VCB = - 50 V IC = 0; VEB = - 4 V VCE = -3V; note 1 IC = -100 mA IC = -500 mA, IB=-50 mA 0 IE = ie = 0; VCB =-10 V ; f = 1 MHz IE = 50 mA; VCE = - 1 0 V ; f = 100 MHz Note 1. Pulse test: tp 300 s; 0.02. 2. hFE: Q Gade: 120~270 R Gade: 180~390 RATING CHARACTERISTIC CURVES ( CHT1198PT ) Figure 1. Grounded Emitter Propagation Characteristics 100 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current IC/IB=10 COLLECTOR CURRENT, -IC(mA) VCE=-3V Ta = 25 C o Ta = 100oC 10 COLLECTOR SATURATION VOLTAGE, -VCEsat(V) 1.0 Ta = 100oC 0.1 Ta = -25oC Ta = -25oC Ta = 25oC 0.01 0.001 0.01 0.1 1.0 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE-EMITTER VOLTAGE, -VBE(V) COLLECTOR CURRENT, -IC(A) Figure 3. DC Current Gain 1000 VCE=-3.0V Ta = 25oC Ta = 100oC DC CURRENT GAIN, hFE 100 Ta = -25oC 10 0.001 0.01 0.1 1.0 COLLECTOR CURRENT, -IC(A) |
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