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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere CHRT5993TPT APPLICATION * UHF Converter * Local Oscillator SC-75/SOT-416 FEATURE * Small surface mounting type. (SOT-416/SC-75) * High Transition frquency. (3) 0.1 0.20.05 0.5 1.60.2 0.5 (2) CONSTRUCTION * NPN RF Transistor 1.00.1 0.1 0.30.05 0.1 0.20.05 0.80.1 (1) 0.150.05 0.1Min. 0.6~0.9 0~0.1 1.60.2 CIRCUIT (1) B C (3) E (2) Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - -50 - MIN. MAX. 20 11 3 50 0.15 V V V mA W C C 2007-05 UNIT +150 150 RATING CHARACTERISTIC CURVES ( CHRT5993TPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 20 11 3 56 1400 - Typ. 3200 0.8 Max. 0.5 0.5 180 0.5 1.5 Unit V V V uA uA V MHz pF Conditions IC= 10uA, IE= 0A IC= 1mA, IB= 0A IE= 10uA, IC= 0A VCB= 10V, IE= 0A VEB= 2V, IE= 0A VCE= 10V, IC= 5mA IC= 10mA, IB= 5mA VCE= 10V, IE= -10mA VCB= 10V, f = 1MHz, IE= 0A RATING CHARACTERISTIC CURVES ( CHRT5993TPT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 1000 Figure 2. Collector-Base Voltage vs Collector Output Capacitance 10 IC/IB=2 f=1.0MHz COLLECTOR OUTPUT CAPACITANCE, Cob(pF) 100 1 Ta = 25oC Ta = 25oC 10 0.1 1.0 10 100 0.1 0.1 1.0 10 100 COLLECTOR CURRENT, IC(mA) COLLECTOR-BASE VOLTAGE, VCB(V) Figure 3. DC Current Gain 1000 VCE=10V DC CURRENT GAIN, hFE Ta = 25oC 100 10 0.1 1.0 10 100 COLLECTOR CURRENT, IC(mA) |
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