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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTC114WEPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-75/SOT416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=10k, Typ. ) 0.1 0.20.05 0.5 1.60.2 0.5 SC-75/SOT-416 (2) (3) 1.00.1 0.1 0.30.05 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.1 0.20.05 0.80.1 (1) MARKING WEA Gnd In 1 0.150.05 0.1Min. 0.6~0.9 0~0.1 1.60.2 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS - MIN. MAX. 50 +30 100 V V UNIT -10 - - Tamb 25 OC, Note 1 - -55 - junction - soldering point - mA 100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTC114WEPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=50V IO=2mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=-10mA; VO=-5.0V - - - - 24 7 0.37 - MIN. 0.8 - - 0.1 - - - 10 0.47 250 TYP. - 3.0 0.3 0.88 0.5 - 13 0.57 - K MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp300uS; 0.02. |
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