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| SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION *With TO-3PN package *DARLINGTON *High DC current gain *Complement to type TIP140/141/142 APPLICATIONS *Designed for general-purpose amplifier and low frequency switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP145/146/147 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP145 VCBO Collector-base voltage TIP146 TIP147 TIP145 VCEO Collector-emitter voltage TIP146 TIP147 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-peak Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -10 -15 -0.5 125 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance case to ambient MAX 1.0 35.7 UNIT /W /W SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP145 VCEO(SUS) Collector-emitter sustaining voltage TIP146 TIP147 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage TIP145 ICBO Collector cut-off current TIP146 TIP147 TIP145 ICEO Collector cut-off current TIP146 TIP147 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-5A ,IB=-10mA IC=-10A ,IB=-40mA IC=-10A ,IB=-40mA IC=-10A ; VCE=-4V VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-30mA, IB=0 CONDITIONS SYMBOL TIP145/146/147 MIN -60 -80 -100 TYP. MAX UNIT V -2.0 -3.0 -3.5 -3.0 V V V V -1 mA -2 mA -2 1000 500 mA Switching times td tr tstg tf Delay time Rise time Storage time Fall time VCC =-30 V, IC = -5.0 A, IB =-20 mA ;Duty CycleE20% IB1 = IB2, RC & RB Varied, TJ = 25 0.15 0.55 2.5 2.5 s s s s 2 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE TIP145/146/147 Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 4 |
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