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SSF2616E
DESCRIPTION
The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
VDS = 20V,ID = 7A RDS(ON) < 30m @ VGS=2.5V RDS(ON) < 26m @ VGS=3.1V RDS(ON) < 23m @ VGS=4V RDS(ON) < 22m @ VGS=4.5V ESD Rating2000V HBM High Power and current handing capability Lead free product is acquired Surface Mount Package Schematic diagram
Marking and pin Assignment
Application
Battery protection Load switch Power management SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking SSF2616E Device SSF2616E Device Package SOP-8 Reel Size O330mm Tape width 12mm Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage
Limit
20 12 7 5 25 1.5 -55 To 150
Unit
V V A A A W
VDS VGS ID(25) ID(70) IDM PD TJ,TSTG
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RJA 83 /W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS
Min
Typ
Max
Unit
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SSF2616E
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A VGS=4.5V, ID=6.5A Drain-Source On-State Resistance RDS(ON) VGS=4V, ID=6A VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.5A 0.84 1.2 V td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=7A, VGS=4.5V VDD=10V,ID=1A VGS=4.5V,RGEN=6 10 11 35 30 10 2.3 3 20 25 70 60 15 nS nS nS nS nC nC nC Clss Coss Crss VDS=8V,VGS=0V, F=1.0MHz 600 330 140 PF PF PF gFS VDS=10V,ID=6.5A 0.6 0.75 16.5 17 19 22 6.6 1.2 22 23 26 30 V m m m m S BVDSS IDSS IGSS VGS=0V ID=250A VDS=20V,VGS=0V VGS=4.5V,VDS=0V VGS=10V,VDS=0V 20 1 200 10 V A nA uA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.
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SSF2616E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton tr
90%
Vdd Rl D G Vout
td(on)
td(off)
toff tf
90%
Vin Vgs Rgen
VOUT
10%
INVERTED
10% 90%
VIN
S
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
ID- Drain Current (A
PD Power(W)
TJ-Junction Temperature()
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(m)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
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SSF2616E
Normalized On-Resistance Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
TJ-Junction Temperature()
Figure 7 Transfer Characteristics
Rdson On-Resistance(m)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
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Figure 12 Source- Drain Diode Forward
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SSF2616E
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SSF2616E
SOP-8 PACKAGE INFORMATION
NOTES
1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exa
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SSF2616E
ATTENTION:
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.

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