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PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
Rev. 02 -- 22 January 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 C; VGS = 10 V; see Figure 1 Tmb = 25 C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 C; ID = 68 A; Vsup 100 V; unclamped; RGS = 50 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 15 and 14 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14 and 15 Typ Max 100 68 170 175 127 Unit V A W C mJ drain-source voltage Tj 25 C; Tj 175 C drain current total power dissipation junction temperature Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge 17 nC
QG(tot)
total gate charge
-
59
-
nC
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
Quick reference ...continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 C; see Figure 13 Min Typ 10.8 Max 25 13.9 Unit m m
Table 1.
Symbol Parameter Static characteristics RDSon drain-source on-state resistance
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name PSMN013-100PS TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Type number
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
2 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C VGS = 10 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; see Figure 1 tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figure 2 Conditions Tj 25 C; Tj 175 C Tj 175 C; Tj 25 C; RGS = 20 k Min -20 -55 -55 Max 100 100 20 47 68 272 170 175 175 260 Unit V V V A A A W C C C
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode IS ISM EDS(AL)S 68 272 127 A A mJ
Avalanche ruggedness non-repetitive VGS = 10 V; Tj(init) = 25 C; ID = 68 A; Vsup 100 V; drain-source avalanche unclamped; RGS = 50 energy
80 ID (A) 60
003aac512
120 Pder (%) 80
03aa16
40
40
20
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
Fig 1.
Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
3 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
103
ID (A) Limit RDSon = VDS / ID
003aae168
102
tp =10 s
100 s
10 DC
1 1 ms 10 ms 100 ms 10-1 1 10 102 VDS (V) 103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 0.5 Max 0.9 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from vertical in free air junction to ambient
Rth(j-a)
-
60
-
K/W
1 Zth (j-mb) (K/W) 10
-1
003a a d575
= 0.5 0.2 0.1 0.05
10-2
0.02
P = tp T
10-3
s ingle s hot
tp T t
10-4 1e -6
10-5
10-4
10-3
10-2
10-1
1
tp (s )
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
4 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 10 and 11 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 125 C VDS = 100 V; VGS = 0 V; Tj = 25 C VGS = 20 V; VDS = 0 V; Tj = 25 C VGS = -20 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 15 A; Tj = 100 C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 175 C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 C; see Figure 13 RG internal gate resistance f = 1 MHz (AC) total gate charge ID = 25 A; VDS = 50 V; VGS = 10 V; see Figure 14 and 15 ID = 0 A; VDS = 0 V; VGS = 10 V QGS QGS(th) QGS(th-pl) QGD VGS(pl) Ciss Coss Crss gate-source charge pre-threshold gate-source charge post-threshold gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance ID = 25 A; VDS = 50 V; VGS = 10 V; see Figure 15 and 14 VDS = 50 V; see Figure 15 and 14 VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 16 ID = 25 A; VDS = 50 V; VGS = 10 V; see Figure 14 and 15 ID = 25 A; VDS = 50 V; VGS = 10 V; see Figure 15 Min 90 100 1 2 Typ 3 0.06 10 10 29.5 10.8 1 Max 4 4.6 100 2 100 100 25 38.9 13.9 Unit V V V V V A A nA nA m m m
Static characteristics
Dynamic characteristics QG(tot) 59 47.6 13.8 9.2 4.6 17 4.4 3195 221 136 nC nC nC nC nC nC V pF pF pF
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
5 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
Table 6. Symbol td(on) tr td(off) tf VSD trr Qr
Characteristics ...continued Parameter turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 15 A; VGS = 0 V; Tj = 25 C; see Figure 17 IS = 25 A; dIS/dt = 100 A/s; VGS = 0 V; VDS = 50 V Conditions VDS = 50 V; RL = 2 ; VGS = 10 V; RG(ext) = 4.7 ; Tj = 25 C Min Typ 20.7 25 52.5 24 0.85 52 109 Max 1.2 Unit ns ns ns ns V ns nC
Source-drain diode
200 ID (A) 160 20
003a a d577
5000 C (pF) 4000
003a a d580
10 6 5.5
Cis s
120 5 80 2000 40 4.5 3000 Crs s
0 0 1 2 3
VGS (V) = 4 VDS (V) 4
1000 0 2 4 6 8 10 VGS (V)
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 6.
Input and reverse transfer capacitances as a function of gate-source voltage; typical values
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
6 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
45 RDS on (m) 35
003a a d585
150 gfs (S ) 120
003a a d586
90 25 60
15 30
5 4 8 12 16 VGS (V) 20
0 0 30 60 90 120 150 I D (A)
Fig 7.
Drain-source on-state resistance as a function of gate-source voltage; typical values
003a a d582
Fig 8.
Forward transconductance as a function of drain current; typical values
5
003aad280
100 ID (A) 80
VGS(th) (V) 4 max
60 Tj = 175 C 40 25 C 20
3
typ
2
min
1
0 0 2 4 VGS (V) 6
0 -60
0
60
120 Tj (C)
180
Fig 9.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of junction temperature
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
7 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
10-1 ID (A) 10-2 min typ max
03aa35
3.2 a 2.4
003aad774
10-3 1.6 10-4 0.8
10-5
10-6 0 2 4 VGS (V) 6
0 -60
0
60
120
Tj (C)
180
Fig 11. Sub-threshold drain current as a function of gate-source voltage
Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature
10 VGS (V) 8 VDS = 50V 6
003a a d583
30 RDSon (m) 25 VGS (V) = 4.5
003aad578
20
4
15 5 6 10 20
2
10 0 20 40 60 ID (A) 80
0 0 15 30 45 QG (nC) 60
Fig 13. Drain-source on-state resistance as a function of drain current; typical values
Fig 14. Gate-source voltage as a function of gate charge; typical values
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
8 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
104 VDS ID VGS(pl) VGS(th) VGS QGS1 QGS2 QGD QG(tot)
003aaa508
003aad581
C (pF)
Ciss
103 Coss
102
Crss
QGS
Fig 15. Gate charge waveform definitions
10 10-2
10-1
1
10 VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
003a a d584
100 IS (A) 80
60
40 Tj = 175 C 20 25 C
0 0 0.3 0.6 0.9 VS D (V) 1.2
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
9 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 18. Package outline SOT78 (TO-220AB)
PSMN013-100PS_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
10 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
8. Revision history
Table 7. Revision history Release date 20100122 Data sheet status Product data sheet Objective data sheet Change notice Supersedes PSMN013-100PS_1 Document ID PSMN013-100PS_2 Modifications: PSMN013-100PS_1
*
Data sheet status changed from Objective to Product.
20090917
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
11 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
12 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN013-100PS_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 22 January 2010
13 of 14
NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m standard level MOSFET in TO220.
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 January 2010 Document identifier: PSMN013-100PS_2

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