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| EMP201 17.5 - 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 FEATURES * * * 17.5 - 21.0 GHz Bandwidth 24.5dBm Output Power at 1dB Compression 18.0 dB Typical Power Gain APPLICATIONS * * Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2250um X 1000um ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL F P1dB Gss IP3 Input RL Output RL Idd Vdd Rth PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Compression VDS = 8 V, IDSQ 1/2 IDSS Small Signal Gain Third Order Interception Point Input Return Loss Output Return Loss Power Supply Current Power Supply Voltage Thermal Resistance (Au-Sn Eutectic Attach) 8 6 MIN 17.5 23.5 16 24.5 18 31 10 8 150 7 50 210 8 o TYP MAX 21.0 UNITS GHz dBm dB dBm dB dB mA V C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation VALUE 8V -3 V 300mA 8mA @ 3dB compression 150C -65/150C 3.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH -THS)/RTH; where THS = ambient temperature Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMP201 17.5 - 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 Typical Performance: 1. P-1 and G-1 P201 P-1 & G-1 at 8V, 160mA 27 25 23 21 19 17 17 18 19 20 21 22 Frequency (GHz) P-1 (dBm) G-1 (dB) 2. Linear Gain and Return Loss Versus Frequency 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 16.0 16.5 17.0 17.5 18.0 18.5 19.0 S21 S22 S11 freq, GHz Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 EMP201 17.5 - 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 1000 x 2250 microns Chip Thickness: 75 13 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com |
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