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 NPN BU911 HIGH VOLTAGE POWER DARLINGTON
The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCES VEBO IC IB PD TJ TStg
Ratings
Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) Emitter-Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature range
Value
400 450 5 6 10 1 60 150 -65 to +150
Unit
V V V A A A Watts C C
IC ICM
@ TC = 25
THERMAL CHARACTERISTICS Symbol
RthJ-c
Ratings
Thermal Resistance, Junction to case
Value
70
Unit
K/W
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
ICEO ICES IEBO VCEO(sus)
Ratings
Collector Cutoff Current Collector Cutoff Current
Test Condition(s)
VCE=400 V, IB=0V VCE=450 V, VBE=0 VCE=450 V, VBE=0, TC=125C VBE=5.0 V, IC=0
Min Typ Mx Unit
400 1 1 5 5 mA mA mA V
Emitter Cutoff Current Collector- Emitter sustaining IC=100 mA Voltage (1)
COMSET SEMICONDUCTORS
1/2
NPN BU911
Symbol
VF VCE(SAT)
Ratings
Didode forward Voltage Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1)
IF=4 A
Test Condition(s)
IC=2.5 A, IB=50 mA IC=4 A, IB=200 mA IC=2.5 A, IB=50 mA IC=4 A, IB=200 mA
Min Typ Mx Unit
2.5 1.8 1.8 2.2 2.5 V V
VBE(SAT)
V
(1) Pulse conditions : tp < 300 s, duty cycle =1.5%
NPN BU911
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2


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