|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APTM120TDU57PG Triple dual common source VDSS = 1200V RDSon = 570m typ @ Tj = 25C ID = 17A @ Tc = 25C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies S5/S6 MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S2 G2 S4 G4 S6 G6 D2 D4 D6 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 1200 17 13 68 30 684 390 22 50 3000 Unit V A V m W A mJ July, 2006 1-6 APTM120TDU57PG- Rev 1 D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTM120TDU57PG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C Typ VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V 570 3 Max 250 1000 684 5 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Min Typ 5155 770 130 187 24 120 20 15 160 45 990 685 1565 857 Max Unit pF nC ns J J Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C Min Typ VGS = 0V, IS = - 17A IS = - 17A VR = 600V diS/dt = 100A/s Tj = 25C Tj = 25C 1291 29 Max 17 13 1.3 10 Unit A V V/ns ns C July, 2006 2-6 APTM120TDU57PG- Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 17A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM120TDU57PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 Typ Max 0.32 150 125 100 5 250 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 SP6-P Package outline (dimensions in mm) 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM120TDU57PG- Rev 1 July, 2006 APTM120TDU57PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5 0.3 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 50 V GS=15, 10 & 8V Transfert Characteristics 80 70 ID, Drain Current (A) VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 40 30 20 10 0 0 5 10 15 20 7V 6.5V 60 50 40 30 20 10 0 TJ=25C T J=125C T J=-55C 6V 5.5V 5V 25 30 0 1 2 3 4 5 6 7 8 9 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 8.5A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 16 12 8 4 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 V GS=10V VGS=20V 10 20 30 40 25 50 75 100 125 150 July, 2006 4-6 APTM120TDU57PG- Rev 1 ID, Drain Current (A) TC, Case Temperature (C) www.microsemi.com APTM120TDU57PG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS =10V ID=8.5A 100 100s limited by RDSon 1ms 10ms 10 1 Single pulse TJ =150C TC=25C 1 1200 10 100 1000 VDS , Drain to Source Voltage (V) 0 Gate Charge vs Gate to Source Voltage I D=17A TJ=25C V DS=240V VDS=600V V DS =960V 10000 Ciss 1000 Coss Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 5-6 APTM120TDU57PG- Rev 1 APTM120TDU57PG Delay Times vs Current 180 160 td(on) and td(off) (ns) 140 100 80 60 40 20 0 5 10 15 20 25 30 35 I D, Drain Current (A) Switching Energy vs Current 0 5 10 15 20 25 I D, Drain Current (A) 30 35 V DS=800V RG =5 T J=125C L=100H Rise and Fall times vs Current 80 VDS=800V RG=5 TJ=125C L=100H t d(off) 60 tf tr and tf (ns) 120 40 tr 20 td(on) Switching Energy vs Gate Resistance 4 VDS=800V ID=17A TJ=125C L=100H 3 Switching Energy (mJ) Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 5 V DS=800V RG=5 T J=125C L=100H Eon Eoff Eoff 3 2 1 Eoff Eon 0 10 15 20 25 30 35 0 5 10 15 20 25 30 35 I D, Drain Current (A) Operating Frequency vs Drain Current 200 175 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 4 6 VDS=800V D=50% RG=5 T J=125C T C=75C ZCS ZVS 100 T J=150C 10 T J=25C Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 July, 2006 8 10 12 14 ID, Drain Current (A) 16 VSD, Source to Drain Voltage (V) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM120TDU57PG- Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein |
Price & Availability of APTM120TDU57PG |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |