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APTGT100TDU120TPG
Triple Dual Common Source Fast Trench + Field Stop IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant
C1
C3
C5
G1 NTC1 NTC2 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
May, 2009 1-5 APTGT100TDU120TPG - Rev 0
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Max ratings 1200 140 100 200 20 480 200A @ 1100V
Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT100TDU120TPG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 3.9 Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 mJ 10 Max Unit pF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 100 1.6 1.6 170 280 9 18 5 9 2.1 Unit V A A V ns C mJ
May, 2009 2-5 APTGT100TDU120TPG - Rev 0
di/dt =2000A/s
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APTGT100TDU120TPG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B 25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 exp B25 / 85 T - T 25
T: Thermistor temperature 1 RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit k % K %
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.26 0.48 175 125 100 5 250 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M6
SP6-P Package outline (dimensions in mm)
9 places (3:1)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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3-5
APTGT100TDU120TPG - Rev 0
May, 2009
APTGT100TDU120TPG
Typical Performance Curve
200 Output Characteristics (VGE=15V) Output Characteristics 200 TJ = 125C
TJ=125C
150 IC (A)
TJ=25C
150 IC (A)
VGE=17V
VGE=13V VGE=15V
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
200 175 150 125 IC (A) 100 75 50 25 0 5
Transfert Characteristics
TJ=25C TJ=125C
25 20 E (mJ) 15 10 5 0
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 3.9 TJ = 125C Eon Eoff Er Eon
TJ=125C
6
7
8
9
10
11
12
0
25
50
75
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25
VCE = 600V VGE =15V IC = 100A TJ = 125C
Eon
Reverse Bias Safe Operating Area 240 200 160
Eoff Er
IC (A)
120 80 40 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT100TDU120TPG - Rev 0
May, 2009
APTGT100TDU120TPG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40
ZCS ZVS VCE=600V D=50% RG=3.9 TJ=125C Tc=75C
Forward Characteristic of diode 200
TJ=25C
150 IF (A)
TJ=125C
30 20
100
50 10 0 0 20 40 60 80 IC (A) 100 120 140
Hard switching
TJ=125C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.9 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT100TDU120TPG - Rev 0
May, 2009

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