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Datasheet File OCR Text: |
Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HSBD434 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------36W VCBO Collector-Base Voltage-----------22V VCEO Collec tor-Emitter Voltage----------22V VCES Collector-Emitter Voltage----------22V VEBO Emitter-Base Voltage-------------5V ICCollector Current Pulse------------ (c) -7A ICCollector Current DC(c)------------4A IBBase Current------------------1A 1D Emitter, E 2D Collector C 3D Base B ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO ICES Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current 40 85 50 - 0.2 - 22 3 140 140 - 100 -1 - 100 |I VCB=-22V, IE=0 A mA VEB=-5V, IC=0 |I VCE=-22V, VEB=0 A VCE=-5V, IC=-10mA VCE=-1V, IC=-500mA VCE=-1V, IC=-2A *HFE 1(c) DC Current Gain *HFE 2(c) DC Current Gain *HFE 3(c) DC Current Gain *VCE(sat) *VBE(on) VCEO(sus) ft Collector- Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product - 0.5 - 1.1 V V V IC=-2A, IB=-0.2A VCE=-1V, IC=-2A IC=-100mA, IB=0 MHz VCE=-1V, IC=-250mA, * Pulse Test:PW=300 |I Duty Cyc l e=1.5% Pulsed S, |
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