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| EMR101_A DC - 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES * * * * Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS * Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS (Ta = 25 C) PARAMETERS/TEST CONDITIONS Operating Frequency Range Input Power at 1dB Compression Input Power at 0.25dB Compression Minimum Attenuation Maximum Attenuation Return Loss (DC - 8GHz) (8 - 26GHz) (DC - 8GHz) (8 - 26GHz) @min. attenuation @max. attenuation MIN DC 6 -5 TYP 8 -2 1.5 2.5 25 30 15 12 MAX 26 UNIT GHz dBm dBm dB dB dB dB dB dB 2.5 3.5 30 35 10 10 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 RF Input Power Control Voltage Storage Temperature Operating Temperature 1. +16dBm +1.0 to -8 Volts -65 to 150 deg C -55 to +125 deg C Operating the device beyond any of the above rating may result in permanent damage. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMR101_A DC - 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC INSERTION LOSS 0.0 ATTENUATION RANGE -26 RETURN LOSS -10 RELATIVE ATTENUATION VS. CONTROL VOLTAGE @2GHz 30 25 At t enuat i on, dB 20 15 10 5 0 0 0. 5 1 1. 5 2 2. 5 Cont r ol Vol t age, - V Attenuation (dB) Return Loss (dB) Attenuation (dB) -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 5 10 15 20 25 30 -28 -30 -32 -34 0 5 10 15 20 25 30 freq, GHz freq, GHz RELATIVE ATTENUATION 0 Attenuation (dB) -15 Min. Attenuation Max. Attenuation -10 -20 -20 -25 -30 -30 0 5 10 15 20 25 30 -40 0 5 10 15 20 25 30 freq, GHz freq, GHz RELATIVE PHASE 200 Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Relative Phase (DEG) 100 3dB 18dB 30dB 0 -100 -200 0 5 10 15 20 25 30 freq, GHz EMR101_A DC - 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC Input Power at 1dB and 0.25dB Compression VS. Attenuation 20 I nput Pow , dBm er 15 10 5 0 -5 0 2 4 6 8 At t enuat i on, dB 10 12 Pi n- 0. 25 Pi n- 1 Pout and Attenuation VS. Pin at High Attenuation Setting 0 At t enuat i on, dB -5 - 10 - 15 - 20 - 25 - 30 - 10 At t enuat i on Pout -5 0 Pi n, dBm 5 10 15 Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMR101_A DC - 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC Outline Drawing All dimensions in microns Bond pads are 100microns by 100microns Die thickness is 7513 microns Backside metallization: GOLD Bond pads metallization: GOLD On Chip DC Conversion Circuit R R11 R=50 Ohm R R12 R=50 Ohm RFIN R R19 FET IN3 R R18 FET OUT3 RFOUT R R20 FET Shunt3 R R14 R=500 Ohm R R21 R=500 Ohm R R13 R=1000 Ohm R R15 FET Shunt2 On chip DC conversion circuit maintains impedance match while attenuation is varied. Apply +6V to V+ and -6V to V-. Input control voltage which will be applied to VC ranges from 0V (max. attenuation) to -4V (min. attenuation). V+ VC V- Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com |
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