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| IN 5832 SCHOTTKY RECTIFIER NAINA 40AMPERE 20 VOLTS Designer's Data Sheet Switchmode Power Rectifirs . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oside passivation and metal overlap contact. ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free whelling diodes, and polarity protection diodes. * Extremely Low VF * Low Power Loss/High * Low Stored Charge, Majority Efficiency Carrier Conduction * High Surge Capacity Mechnical Characteristics : * Case Welded steel, hermetically seated * Finish : All External Surtaces Corrosion Resistant and Terminal .Lead is Readily Solderable Solder Heat : The excellent heat transfer property of the heavy duty copper anode terminal which transmits heat away from the die requires that caution be used when attaching wires. * Stud Torque: 15 Ib-in max MAXIMUM RATINGS Ratings Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM PC Blooking Voltage VRSM Nonrepetitive Peak Reverse Voltage VRSM Average Rectified Forward Current IO VR(equiv) 0.2 VR(dc).. TC=850C Ambient Temperature Rated VR(dc). PF(AV)= 0, RJA=3.50C/W TA Nonrepetitive Peak Surge Current IFSM (surge applied at rated load conditions, halfwave, single phase, 50 Hz) Operating and Storage Junction Temperature Range TJ, Tstg (Reverse voltage applied) Peak Operating Junction Temperature (Forward TJ(pk) Current Applied) THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction to case RJC ELECTRICAL CHARACTERISTICS (TC =250Cunless otherwise noted) Maximum Instantaneous Forward Voltage(1) (IF=10 Amps) VF ( IF=40 Amps)) (IF=125 Amps) Maximum Instantaneous Reverse Current @ Rated dc Voltage(1) (1) (TC=1000C Data (1) Pulse Test: Pulse Width = 300 s, Duty Cycle=2%, 1N5832 20 UNIT Volts 24 40 100 800 for one cycle -65 to + 125 150 Volts Amps C Amps 0 0 C C 0 Max 1.0 0.36 0.52 0.980 20 150 0 Unit C/W Volts ma |
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