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| STE180N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE180N05 s s V DSS 50 V R DS( on) < 0.006 ID 180 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS s ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M(*) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 50 50 20 180 115.5 540 360 2.9 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V (*) Pulse width limited by safe operating area July 1993 1/8 STE180N05 THERMAL DATA R thj-cas e R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.35 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage I D = 1 mA Test Conditions V GS = 0 V Min. 50 400 2 400 Typ. Max. Unit V A mA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V G S(th) R DS( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V Test Conditions ID = 1 mA ID = 90 A Min. 2 0.004 Typ. Max. 4 0.006 Unit V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS = 15 V V DS = 25 V I D = 90 A f = 1 MHz VG S = 0 V Min. Typ. 100 12 5200 1200 Max. Unit S nF pF pF SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 25 V ID = 90 A V GS = 10 V R G = 4.7 (see test circuit, figure 1) V DD = 40 V ID = 180 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 40 V V GS = 10 V ID = 180 A Min. Typ. 55 210 900 Max. Unit ns ns A/s Qg Total Gate Charge 270 nC 2/8 STE180N05 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V ID = 180 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) Min. Typ. 40 315 440 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 180 A V GS = 0 160 480 6 I SD = 180 A di/dt = 100 A/s V DD = 25 V T j = 150 o C (see test circuit, figure 3) Test Conditions Min. Typ. Max. 180 540 1.6 Unit A A V ns nC A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STE180N05 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/8 STE180N05 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 5/8 STE180N05 Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE180N05 ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O P 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 5.5 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.216 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J K L M H C 0041565 7/8 STE180N05 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 |
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