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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.). at f=1kHz. Complementary to KTC3198A. K D G B KTA1266A EPITAXIAL PLANAR PNP TRANSISTOR C A N E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -50 -50 -5 -150 -50 400 150 -55 150 UNIT V V V mA mA mW H F F L M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Base Intrinsic Resistance Noise Figure Note : hFE(1) Classification O:70 140, ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCB=-10V, IE=1mA, f=30MHz VCE=-6V, IC=-0.1mA, Rg=10k GR:200 400 , f=1kHz MIN. 70 25 80 TYP. -0.1 4.0 30 1.0 MAX. -0.1 -0.1 400 -0.3 -1.1 7.0 dB 10 V V MHz pF UNIT A A SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob rbb' NF Y:120 240, 2010. 1. 28 Revision No : 1 1/2 KTA1266A I C - VCE COLLECTOR CURRENT I C (mA) -240 -200 -160 -120 -80 -40 0 -0.5 IB =-0.2mA -2.0 COMMON EMITTER Ta=25 C -1.5 -1.0 h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER 1k 500 300 Ta=100 C Ta=25 C V CE =- 6V 100 50 Ta=-25 C VC E =- 1V 0 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -500 -300 -100 -50 -30 -10 -0.1 Ta =1 00 fT - IC TRANSITION FREQUENCY f T (MHz) 3k COMMON EMITTER VCE =-10V Ta=25 C -1k COMMON EMITTER I C /I B =10 1k 500 300 C Ta=25 C Ta=-25 C 100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B - VBE -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COMMON EMITTER VCE =-6V Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 -1k BASE CURRENT I B (A) C Ta=1 00 BASE-EMITTER VOLTAGE VBE (V) Ta=2 5C Ta=25 C AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 1 2/2 |
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