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Ordering number : ENA1556
ECH8202
SANYO Semiconductors
DATA SHEET
ECH8202
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
High-power IGBT/MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers.
Features
* * * * * *
Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2x0.8mm) Conditions Ratings 30 30 30 6 12 24 1.2 1.6 150 -55 to +150 Unit V V V V A A A W C C
Marking : HB
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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11310EA TK IM TC-00002235 No. A1556-1/4
ECH8202
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE3 fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA VCE=2V, IC=4A VCE=2V, IC=10A VCE=10V, IC=1A VCB=10V, f=1MHz IC=6A, IB=300mA IC=2A, IB=40mA IC=2A, IB=40mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 30 30 30 6 65 235 17 200 170 120 200 60 55 35 0.85 90 70 1.2 MHz pF mV mV V V V V V ns ns ns Conditions Ratings min typ max 0.1 0.1 560 Unit A A
Package Dimensions
unit : mm (typ) 7011A-005
Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3
Electrical Connection
8 7 6 5
1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector Top view
1
2
3
4
0.25
1 0.65
4 0.3
1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector
Bot t om View
0.07
0.9
SANYO : ECH8
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR 50 RB + 100F VBE= --5V + 470F VCC=12V IB1 IB2 OUTPUT RL
IC=50IB1= --25IB2=5A
No. A1556-2/4
ECH8202
90mA
10 9
IC -- VCE
50 mA
4 0mA
35mA
12
IC -- VBE
VCE=2V
30mA
25mA
10
Collector Current, IC -- A
100mA
20mA
5mA
7 6 5 4 3 2 1 0
Collector Current, IC -- A
8
8
Ta=75 C
0 0.2 0.4 0.6
7
A4 60m 0mA
A
15mA
10mA
6
25C
80m
4
5mA
2
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
--25C
0.8
1.0
1.2 IT15016
Collector-to-Emitter Voltage, VCE -- V
1000 7 5
hFE -- IC
IT15007 1000
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
VCE=0.5V
7
VCE=2V
5
DC Current Gain, hFE
DC Current Gain, hFE
Ta=75C 25C
Ta=75C 25C
3 2
--25C
3 2
--25C
100 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT15017
100 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT15018
Collector Current, IC -- A
7 5
f T -- IC
Collector Current, IC -- A
3
VCE(sat) -- IC
VCE=10V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2 100 7 5 3 2 10 7 5 3 2 1.0 0.01
IC / IB=10
Gain-Bandwidth Product, f T -- MHz
3 2 100 7 5 3 2 10 7 5 0.01
25
C
= Ta
C 75 5C --2
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
3 2
VCE(sat) -- IC
7 10 IT15019
5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
3
VCE(sat) -- IC
5 7 10 2 IT15020
IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
IC / IB=50
100 7 5 3 2 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT15021
100 7 5
C 25
5C =7 Ta 5C --2
25
3 2
C
5C =7 Ta C --25
10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT15022
Collector Current, IC -- A
Collector Current, IC -- A
No. A1556-3/4
ECH8202
3
VBE(sat) -- IC
IC / IB=50
5 3 2
Forward Bias A S O
ICP=24A IC=12A
1m
10s
s 0 10
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
Collector Current, IC -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
1.0
DC
1 10 0ms 0m s
op er ati on
s
s 0 50
Ta= --25C
7 5
75C
25C
3 2 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
1.8 1.6
5 7 10 2 IT15023
0.01 0.01
Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 IT15047
PC -- Ta
When mounted on ceramic substrate (900mm2x0.8mm)
Collector Dissipation, PC -- W
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT15046
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This catalog provides information as of January, 2010. Specifications and information herein are subject to change without notice.
PS No. A1556-4/4

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