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STRUCTURE TYPE PRODUCT SERIES FEATURES
Silicon Monolithic Integrated Circuit 0.3A Low Dropout Voltage Regulator with Shut Down SwitchAdjustable Voltage
Maximum Output Current : 300A High Input Voltage : 35V, Built in Over Voltage Protection
ABSOLUTE MAXIMUM RATINGSTa=25 Parameter Symbol Supply Voltage Vcc Output Control Voltage VCTL Power Dissipation Pd (TO220CP-V5) Operating Temperature Range Topr Storage Temperature Range Tstg Maximum Junction Temperature Tjmax Peak Supply Voltage Vcc peak
Limits -0.3 +35 -0.3 Vcc 2000 -40 +125 -55 +150 150 50
1
Unit V V mW V
2
3
1 Do not however exceed Pd. 2 Derating in done at 16mW/ for operating above Ta25.without heat sink 3 Bias voltage in 200msec (tr1msec).
OPERATING CONDITIONSTa=-40+125, however do not exceed Pd. Parameter Symbol Min. Supply Voltage Output Current Output Voltage PROTECTIONDesign Guarantee Parameter Over Voltage Protection Symbol Vcc Min. 26 Typ. 28 Vcc Io Vo 4.0 3
Max. 25.0 0.3 15
Unit V A V
Max. 30
Unit V
NOTE : This product is not designed for protection against radioactive rays.
REV.
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ELECTRICAL CHARACTERISTIC Unless otherwise specified, Ta=25Vcc=10VVCTL=5VIo=200mAVo=5V Setting Limit Parameter Symbol Umit Conditions Min. Typ. Max. Shut Down Current Isd 0 10 A VCTL=0V Bias Current Ib 2.5 5.0 mA VCTL=2V, Io=0mA Terminal Voltage Vc 1.200 1.225 1.250 V Io=50mA Vd Vcc=Vox0.95 Dropout Voltage 0.3 0.5 V Peak Output Current Io 0.3 A f=120Hz,ein1=1Vrms, Ripple Rejection R.R. 45 55 dB Io=100mA Line Regulation Reg.I 20 100 mV Vcc=625V Load Regulation Reg.L 40 80 mV Io=5mA200mA Temperature Coefficient Tcvo 0.02 / Io=5mA,Tj=0125 of Output Current Output Short Current Ios 0.1 A Vcc=25V,Vo=0V ON Mode Voltage VthH 2.0 V ACTIVE MODE, Io=0mA OFF Mode Voltage VthL 0.8 V OFF MODE, Io=0mA Input High Current ICTL 100 200 300 A VCTL=5V, Io=0mA
1 ein : Input Voltage Ripple
PHYSICAL DIMENSIONS, MARKING
Marking
BA3662
Lot. No.
REV.
3/4 BLOCK DIAGRAM PIN NO. , PIN NAME Pin Number
Vref Driver
Pin Name CTL Vcc GND VO C
1 2
4
Vcc
2
VO
3 4 5
OVP
TSD
OCP
1
3
CTL
GND
5C
NOTES FOR USE
1. Absolute maximum range Absolute Maximum Ratings are those values beyond which the life of a device may be destroyed we cannot be defined the failure mode, such as short mode or open mode. Therefore physical security countermeasure, like fuse, is to be given when a specific mode to be beyond absolute maximum ratings is considered. 2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics. 3. GND pin voltage GND terminal should be connected the lowest voltage, under all conditions. And all terminals except GND should be under GND terminal voltage under all conditions including transient situations. 4. GND pattern When both a small-signal GND and high current GND are present, single-point grounding (at the set standard point) is recommended, in order to separate the small-signal and high current patterns, and to be sure the voltage change stemming from the wiring resistance and high current does not cause any voltage change in the small-signal GND. In the same way, care must be taken to avoid voltage fluctuations in any connected external component GND. 5. Be sure to connect a capacitor with capacitance of at least 22F, including temperature characteristics and variation, to prevent oscillation between the Vo and GND. Note that if the capacity of the capacitor changes due to factors such as changes in temperature or ESR, oscillation may occur, and the original characteristics of the IC may not be realized. For example, when a ceramic capacitor is employed, oscillation will be generated because the series resistance is too small. Please take countermeasures to prevent this, such as adding a series resistor. Standard electrolytic capacitors are subject to extremely large capacitance and ESR fluctuations due to temperature conditions. Particularly at low temperature, capacity is decreased, while ESR grows larger, conditions which increase the vulnerability to oscillation. Therefore, be certain to check for the presence of oscillation. Keep capacitor capacitance within a range of 22F1000F. It is also recommended that a 0.33F bypass capacitor be connected as close to the input pin-GND as location possible. However, in situations such as rapid fluctuation of the input voltage or the load, please check the operation in real application to determine proper capacitance. 6. Mounting Failures Mounting failure, such as misdirection or mismount, may cause a malfunction in the device. 7. Malfunction may be happened when the device is used in the strong electromagnetic field.
8. Precautions for board inspection Connecting low-impedance capacitors to run inspections with the board may produce stress on the IC. Therefore, be certain to use proper discharge procedure before each process of the test operation. To prevent electrostatic accumulation and discharge in the assembly process, thoroughly ground yourself and any equipment that could sustain ESD damage, and continue observing ESD-prevention procedures in all handling, transfer and storage operations. Before attempting to connect components to the test setup, make certain that the power supply is OFF. Likewise, be sure the power supply is OFF before removing any component connected to the test setup. 9. Power dissipation If IC is used on condition that the power loss is over the power dissipation, the reliability will become worse by heat up. The power dissipation that is described to the absolute maximum rating in this specification is a value when the heat sink is not populated. In this case it exceed the power dissipation, please consider using the heat sink,etc. Also, be sure to use this IC within a power dissipation range allowing enough of margin.
REV.
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10. Thermal design Use a thermal design that allows for a sufficient margin for power dissipation (Pd) under actual operating conditions. 11. Over current protection circuit OCP The built-in over current protection circuit is designed to respond to the output current and prevent destruction of the IC from load short circuits; however, it is only effective in protecting the IC from destruction in sudden over current accidents. The protection circuit is not to be used continuously, or for transitions. In executing thermal design, bear in mind that over current protection has negative characteristic according with the temperature. 12. Thermal shutdown circuit TSD A built-in internal shutdown circuit is provided to protect the IC from heat destruction. Operation has to be done within the allowable loss range, but in continuous use beyond the range, chip temperature Tj will increase to the threshold, activating the TSD circuit and turning the output power Tr OFF. Once the chip temperature Tj returns to the normal range, the circuit is automatically restored. Note that the TSD circuit is designed to operate over the maximum absolute rating. Therefore, make absolutely certain not to use the TSD function in set design. 13. Internal circuits or elements may be damaged when Vcc and pin voltage are reversed. For example, Vcc short circuit to GND while a external capacitor is charged. Output pin capacitor is recommended no larger than 1000F. In addition, inserting a Vcc series countercurrent prevention diode, or a bypass diode between the various pins and the vcc, is recommended. 14. Positive voltage surges on Vcc pin A power zener diode should be inserted between Vcc and GND for protection against voltage surges of more than 50V on the Vcc pin. 15. Negative voltage surges on Vcc pin A schottky barrier diode should be inserted between Vcc and GND for protection against voltages lower than GND on the Vcc pin. 16. We recommend to put Diode for protection purpose in case of output pin connected with large load of impedance or reserve current occurred at initial and output off. 17. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.
Resistor (Pin A) (Pin B) Transistor (NPN) B E C (Pin B) B N P+ N P N P P+ N Parasitic elements GND N P substrate (Pin A) Parasitic elements or transistors GND Parasitic elements P+ N N Parasitic elements or transistors P P+ GND C E
Example of Simple Monolithic IC Architecture
REV.
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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R1010A


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