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| DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 0.2 3.8 0.2 2.8 MAX. FEATURES * Low saturation voltage VCE(sat) -0.5 V (IC = -2 A, IB = -0.2 A) * Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = -2 V, IC = -1 A) * Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 0.2 13.0 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature -55 to +150C Junction Temperature 150C Maximum Maximum Power Dissipation 1.0 W Total Power Dissipation (TA = 25C) 10 W Total Power Dissipation (TC = 25C) Maximum Voltages and Currents (TA = 25C) Collector to Base Voltage -40 V VCBO Collector to Emitter Voltage -30 V VCEO Emitter to Base Voltage -5.0 V VEBO Collector Current (DC) -3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) -7.0 A Note Pulse Test PW 350 s, Duty Cycle 2% 12 TYP. 0.55 +0.08 -0.05 0.8 +0.08 -0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage SYMBOL hFE1 hFE2 fT Cob ICBO IEBO VCE(sat) VBE(sat) TEST CONDITIONS VCE = -2.0 V, IC = -20 mA VCE = -5.0 V, IC = -0.1 A VCB = -10 V, IE = 0, f = 1.0 MHz VCB = -30 V, IE = 0 A VEB = -3.0 V, IC = 0 A IC = -2.0 A, IB = -0.2 A IC = -2.0 A, IB = -0.2 A Note Note Note Note MIN. 30 60 TYP. 220 160 80 55 MAX. 400 UNIT VCE = -2.0 V, IC = -1.0 mA MHz pF -1.0 -1.0 A A V V -0.3 -1.0 -0.5 -2.0 Note Pulse Test: PW 350 s, Duty Cycle 2% CLASSIFICATION OF hFE Rank Range R 60 to 120 Q 100 to 200 P 160 to 320 E 200 to 400 Remark Test Conditions: VCE = -2.0 V, IC = 1.0 A The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. 2SB772 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise noted.) VCE IC TA TC IC(pulse) IC(DC) 50% Rth PT VCE hFE TC=25C IC IC IB hFE VBE VCE VCE IC IC=10A*IB VBE(sat) VCE IE=0A(Cob) IC=0A(Cib) Cib Cob VCE (sa t) VBE(sat) VCE(sat) IC fT Cib Cob IC VCB VEB 2 VRF |
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