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ARF1519
ARF1519
BeO 104T-100
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz
The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
* Specified 250 Volt, 13.56 MHz Characteristics: * Output Power = 750 Watts. * Gain = 17dB (Class C) * Efficiency > 75%
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
* High Performance Power RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25C unless otherwise specified.
ARF1519 UNIT Volts Amps Volts Watts C
1000 20 30 1350 -55 to 175 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 300A) On State Drain Voltage
1
MIN
TYP
MAX
UNIT Volts A nA mhos Volts
1000 5 7 300 3000 600 3 TBD 2 4 14
(I D(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 10A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 6mA)
Volts
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic (per package unless otherwise noted) Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT
2-2008 050-4935 Rev B
0.13 0.09
C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 150V f = 1 MHz MIN TYP MAX
ARF1519
UNIT
4600 310 90
5600 350 120
pF
FUNCTIONAL CHARACTERISTICS
Symbol GPS
1
Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1
Test Conditions f = 13.56MHz VGS = 0V VDD = 200V
MIN
TYP
MAX
UNIT dB %
17 70
20 75
Pout = 750W
No Degradation in Output Power
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
60 ID, DRAIN CURRENT (AMPERES) Ciss CAPACITANCE (pf) 50 40 30 20 10 TJ = +25C TJ = +125C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C
Coss
Crss
.1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics
050-4935 Rev B
2-2008
ARF1519
1.2 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 ID, DRAIN CURRENT (AMPERES) 50 45 40 35 30 25 20 15 10 5 0 4.5V 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Output Characteristics 5V 5.5V 6.5V 6V
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 3, Typical Threshold Voltage vs Temperature
0.2 0.1 , THERMAL IMPEDANCE (C/W) 0.05 0.2 0.1 0.01 0.005 0.05 0.02 0.01 0.001 SINGLE PULSE
Note:
D=0.5
PDM
t1 t2
qJC
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-5
10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
10-4
10-3
10
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519 F (MHz) 2.0 13.5 Zin () 10.6 -j 12.2 0.5 -j 2.7 ZOL () 31 -j 4.7 15.6 -j 16 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 200V
050-4935 Rev B
2-2008
ARF1519 -- 13.56 MHz Test Circuit
200V C8 C10 Output L2 T1 DUT C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer
L3 C7 C9 L1
RF Input
C4 C5 C6
C1
C2
C3
R1
Parts placement - Not to Scale.
13.56 MHz Test Amp ARF1519
BeO
ARF1518
1525-100
T1
J2
J1
RF 12-04
Thermal Considerations and Package Mounting:
.250
.466
D
The rated 1350W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 200C. The thermal resistance between junctions and case mounting surface is 0.12C/W. When installed, an additional thermal impedance of 0.1C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm.
2-2008
.150r
.500
G S
ARF1519
.250
BeO 1525-100
.750
1.000
1
.125d .500
2
3
1.250 1.500 .300 .200 .005 .040
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste.
4
050-4935 Rev B
1 2 3 4
Drain Source Source Gate

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