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| Diode Modules Preliminary Data Sheet PSKD 255 IFRMS IFAVM VRRM 2 = 2x 450 A = 2x 270 A = 800-1800 V 3 2 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 3 1 PSKD 255/08 PSKD 255/12 PSKD 255/14 PSKD 255/16 PSKD 255/18 1 Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) Maximum Ratings 450 270 9500 10200 8400 9000 451 000 437 000 353 000 340 000 -40...+150 150 -40...+125 A A A A A A A 2s A 2s A 2s A 2s C C C V~ V~ Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 i2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Mounting torque (M6) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per per per per diode; DC current module diode; DC current module other values see PSKT 255 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Characteristic Values 30 mA 1.4 0.8 0.6 0.140 0.07 0.18 0.09 700 260 12.7 9.6 50 V V m K/W K/W K/W K/W C A mm mm m/s 2 Dimensions in mm (1 mm = 0.0394") M8x20 TVJ = 125C; IF = 400 A; -di/dt = 50 A/s Creeping distance on surface Creepage distance in air Maximum allowable acceleration Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 10000 106 It 2 IFSM A VR = 0V A2s 500 A 450 8000 50 Hz 80 % VRRM TVJ = 45C TVJ = 150C IFAVM 400 350 300 DC 180 sin 120 60 30 6000 TVJ = 45C 4000 250 TVJ = 150C 200 150 100 50 2000 0 0.001 0.01 0.1 s t 1 105 1 t ms 10 0 0 25 50 75 100 TC 125 C 150 Fig. 1 Surge overload current IFSM: Crest value, t: duration 500 Ptot W 400 Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current at case temperature Fig. 4 Power dissipation versus forward current and ambient temperature (per diode) RthKA K/W 300 DC 180 sin 120 60 30 0.1 0.2 0.3 0.4 0.6 0.8 1.2 200 100 0 0 100 200 300 400 A IFAVM 0 25 50 75 100 125 C TA 150 1500 Ptot W 1250 R 1000 L RthKA K/W 750 Circuit Circuit B2U B2U 2 xx MDD255 2 PSKD 255 0.06 0.08 0.1 0.15 0.2 0.3 0.5 Fig. 5 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 500 250 0 0 100 200 300 400 500 A IdAVM 0 25 50 75 100 C 125 TA 150 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 2500 W Ptot 2000 RthKA K/W 1500 0.03 0.06 0.1 0.15 0.2 0.3 0.4 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit Circuit B6U B6U 3 PSKD 255 3 xx MDD255 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 125 C 150 TA 0.25 K/W 0.20 ZthJC 0.15 30 60 120 180 DC Fig. 7 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 0.10 0.05 Constants for ZthJC calculation: i Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 ti (s) 0.00054 0.098 0.54 12 1 2 3 4 0.00 10-3 10-2 10-1 100 101 t s 102 0.30 K/W 0.25 ZthJK 0.20 Fig. 8 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.179 0.188 0.196 0.216 0.254 0.15 30 60 120 180 DC 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 0.04 ti (s) 0.00054 0.098 0.54 12 12 1 2 3 4 5 0.00 10-3 10-2 10-1 100 101 t s 102 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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