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Diode Modules
Preliminary Data Sheet
PSKD 250
IFRMS IFAVM VRRM
2
= 2x 450 A = 2x 290 A = 800-1600 V
3 2
VRSM V 900 1300 1500 1700
VRRM V 800 1200 1400 1600
Type
3
1
1
PSKD 250/08 PSKD 250/12 PSKD 250/14 PSKD 250/16
Symbol IFRMS IFAVM IFSM
Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t t t t t t t t = = = = = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), Hz), Hz), Hz), Hz), sine sine sine sine sine sine sine sine
Maximum Ratings 450 A 290 A 11 000 11 700 9000 9600 605 560 405 380 000 000 000 000 A A A A A 2s A2s A 2s A2s C C C V~ V~
Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688

i2dt
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies

TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
-40...+150 150 -40...+125 3000 3600
Mounting torque (M5) Terminal connection torque (M8) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25C For power-loss calculations only TVJ = TVJM per per per per diode; DC current module diode; DC current module other values see Fig. 6/7
2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Characteristic Values 40 mA 1.3 0.75 0.75 0.129 0.065 0.169 0.0845 760 275 12.7 9.6 50 V V m K/W K/W K/W K/W C A mm mm m/s 2
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")
TVJ = 125C, IF = 400 A; -di/dt = 50 A/s Creepage distance on surface Strike distance through air Maximum allowable acceleration
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
Circuit B2 2 x PSKD 250
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3 x PSKD 250
0.15 K/W 30 DC
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133
ZthJC
0.10
0.05
Constants for ZthJC calculation: i
0 0.00 10-3 10-2 10-1 100 101 s 102
Rthi (K/W) 0.0035 0.0165 0.1091
ti (s) 0.0099 0.168 0.456
t
1 2 3
0.20 K/W 30 DC 0.15
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173
ZthJK
0.10
0.05
Constants for ZthJK calculation: i Rthi (K/W) 0.0035 0.0165 0.1091 0.04 ti (s) 0.0099 0.168 0.456 1.36 1 2 3 4
0 0.00 10-3
10-2
10-1
100
101
s
102
t
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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