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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM41A2PAPT CURRENT 36 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * N-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT (1) G D (3) 2 Source 3 Drain( Heat Sink ) S (2) Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM41A2PAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 20 V V 12 36 ID - Pulsed PD TJ TSTG (Note 3) A 100 43 -55 to 150 -55 to 150 W C C Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM41A2PAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 20 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V 20 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=4.5V, ID=10.7A VGS=2.5V, ID=9.1A 0.5 16 21 15 1.5 20 V m 30 S Forward Transconductance VDS =5V, ID = 10.7A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=10V, ID=10.7A VGS=4.5V V DD= 10V ID = 1A , VGS = 4.5 V RGEN= 6 15 2 3 20 20 72 20 20 nC ton 40 40 130 40 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 36 1.3 A V Drain-Source Diode Forward Voltage IS = 10.7A , VGS = 0 V (Note 2) |
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