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PD - 97451
AUTOMOTIVE GRADE
AUIRFR3710Z
HEXFET(R) Power MOSFET
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
V(BR)DSS RDS(on) max. ID (Silicon Limited)
100V 18m 56A 42A
G S
ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D S
D-Pak AUIRFR3710Z
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)d Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
Max.
56 39 42 220 140 0.95 20 150 200 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
h
W W/C V mJ A mJ C
g
300
Thermal Resistance
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient
j
Parameter
Typ.
--- --- ---
Max.
1.05 50 110
Units
C/W
i
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
02/10/2010
AUIRFR3710Z
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 --- --- 2.0 39 --- --- --- --- --- 0.088 15 --- --- --- --- --- --- --- --- 18 4.0 --- 20 250 200 -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 33A V VDS = VGS, ID = 250A S VDS = 25V, ID = 33A A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 69 15 25 14 43 53 42 4.5 7.5 2930 290 180 1200 180 430 100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 33A VDS = 80V VGS = 10V VDD = 50V ID = 33A RG = 6.8 VGS = 10V Between lead,
e e
ns
D
nH
6mm (0.25in.) from package
G
pF
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 35 41 56 A 220 1.3 53 62 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 33A, VGS = 0V TJ = 25C, IF = 33A, VDD = 50V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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AUIRFR3710Z
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C3 AEC-Q101-005 Yes MSL1
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRFR3710Z
1000
TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V
1000
TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.0V 10
10 4.0V 60s PULSE WIDTH Tj = 25C 0.1 1 10 100
1 60s PULSE WIDTH Tj = 175C 0.1 1 10 100
1
0.1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ()
T J = 175C 100
80
T J = 25C
60 TJ = 175C
40
10
TJ = 25C VDS = 25V 60s PULSE WIDTH 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate-to-Source Voltage (V)
20 V DS = 10V 0 0 10 20 30 40 50 60 70 80 ID,Drain-to-Source Current (A)
1.0
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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AUIRFR3710Z
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
12.0 ID= 33A
VGS, Gate-to-Source Voltage (V)
C rss = C gd 10000 C oss = C ds + C gd
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance(pF)
VDS= 80V VDS= 50V VDS= 20V
Ciss
1000
Coss Crss
100
10 1 10 100
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10.00
10
100sec
1.00
T J = 25C
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10
1msec 10msec
0.10 0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6 1.8
100
1000
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
ce
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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AUIRFR3710Z
60 50
ID, Drain Current (A)
3.0
Limited By Package
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 56A VGS = 10V
2.5
40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
2.0
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.576 0.000540 0.249 0.224 0.001424 0.007998
0.01
1
2
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFR3710Z
15V
700
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
600 500 400 300 200 100 0 25 50 75 100
ID TOP 3.4A 4.8A BOTTOM 33A
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS VG QGD
4.0
Charge
VGS(th) Gate threshold Voltage (V)
3.0
Fig 13a. Basic Gate Charge Waveform
ID = 250A
2.0
L
0
DUT 1K
VCC
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
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AUIRFR3710Z
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.05 0.10
1
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
150
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 33A
100
50
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
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AUIRFR3710Z
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRFR3710Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR3710Z
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR3710Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for max. junction temperature. (See fig. 11). typical repetitive avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.28mH This value determined from sample failure population, starting RG = 25, IAS = 33A, VGS =10V. Part not TJ = 25C, L = 0.28mH, RG = 25, IAS = 33A, VGS =10V. recommended for use above this value. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to Pulse width 1.0ms; duty cycle 2%. application note #AN-994. Coss eff. is a fixed capacitance that gives the R is measured at TJ approximately 90C. same charging time as Coss while VDS is rising from 0 to 80% VDSS . Repetitive rating; pulse width limited by
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AUIRFR3710Z
Ordering Information
Base part AUIRFR3710Z Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRFR3710Z AUIRFR3710ZTR AUIRFR3710ZTRL AUIRFR3710ZTRR
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AUIRFR3710Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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