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APTC60DDAM70CT1G
Dual boost chopper Super Junction MOSFET SiC chopper diode
VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged
SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
* * *
Pins 3/4 must be shorted together
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 600 39 29 160 20 70 250 20 1 1800 Unit V A V m W A mJ
September, 2009 1-7 APTC60DDAM70CT1G - Rev 0
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60DDAM70CT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V
3
Max 25 250 70 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, RG = 5 Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 402 980 657 1206 J J ns nC Max Unit nF
Chopper SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=600V Tj = 25C Tj = 175C
Tc = 100C
Min 600
Typ 100 200 20 1.6 2 28 130 100
Max 400 2000 1.8 2.4
Unit V A A
September, 2009 2-7 APTC60DDAM70CT1G - Rev 0
Tj = 25C Tj = 175C IF = 20A, VR = 300V di/dt =1800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
V nC pF
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APTC60DDAM70CT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS SiC Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.5 150 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-7
APTC60DDAM70CT1G - Rev 0
September, 2009
APTC60DDAM70CT1G
Typical Performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A)
6.5V 6V 5.5V
Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
160 120 80
VGS=15&10V
5V
40 0 0 5 10 15
4.5V 4V
20
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 10 20 30 40 50 60 ID, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 19.5A VGS=10V
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 40 35 30 25 20 15 10
September, 2009 4-7 APTC60DDAM70CT1G - Rev 0
VGS=20V
5 0 25 50 75 100 125 TC, Case Temperature (C) 150
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APTC60DDAM70CT1G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss Coss
ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 39A
1000 ID, Drain Current (A)
100
limited by RDSon
100s
10
Single pulse TJ=150C TC=25C 1 10 100
1 ms 10 ms
1
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2
September, 2009 5-7 APTC60DDAM70CT1G - Rev 0
10000
ID=39A TJ=25C
VDS=120V VDS=300V VDS=480V
1000
100
Crss
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
0 0 50 100 150 200 Gate Charge (nC) 250 300
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APTC60DDAM70CT1G
350 300
td(on) and td(off) (ns) Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=5 TJ=125C L=100H
100 tr and tf (ns) 80 60 40 20 0
250 200 150 100 50 0 0 10 20 30 40 50 60 70
ID, Drain Current (A) Switching Energy vs Current 2.5
VDS=400V RG=5 TJ=125C L=100H td(on) VDS=400V RG=5 TJ=125C L=100H
tf
tr
0
10
20
30
40
50
60
70
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ) 4 3 2
Eon VDS=400V ID=39A TJ=125C L=100H
Switching Energy (mJ)
2 1.5 1
Eoff
Eoff
Eon
0.5 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70
1 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 10 15 20 25 30 35 ID, Drain Current (A) 40
VDS=400V D=50% RG=5 TJ=125C TC=75C ZVS
ZCS
IDR, Reverse Drain Current (A)
140
100
TJ=150C
10
TJ=25C
Hard switching
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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6-7
APTC60DDAM70CT1G - Rev 0
September, 2009
1
APTC60DDAM70CT1G
SiC Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 400 IR Reverse Current (A) 350 300 250 200 150 100 50 0 200 300 400 500 600 700 800
TJ=25C TJ=125C TJ=75C TJ=175C
40
IF Forward Current (A)
30 20 10 0 0 0.5
TJ=75C
TJ=175C TJ=125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
VR Reverse Voltage (V)
800 C, Capacitance (pF) 600 400 200 0 1 10 100 VR Reverse Voltage 1000
September, 2009 7-7 APTC60DDAM70CT1G - Rev 0
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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