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| S T M8309 S amHop Microelectronics C orp. Oct.13, 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7A R DS (ON) ( m W ) Max ID -6A R DS (ON) ( m W ) Max 23 @ V G S = 10V 30 @ V G S = 4.5V D1 8 35 @ V G S = -10V 52 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 7 28 1.7 2.0 -55 to 150 -30 20 -6 -24 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M8309 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =7A VGS =4.5V, ID =5A VDS = 15V, VGS = 10V VDS = 10V, ID =7A Min Typ C Max Unit 30 1 10 1.0 1.9 17 23 20 14 680 190 115 3 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 23 m ohm 30 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID = 7A, R L=2.1 ohm, VGS = 10V, RGEN = 6 ohm VDS =15V, ID =7A,VGS =10V VDS =15V, ID =7A,VGS =4.5V VDS =15V, ID = 7A, VGS =10V 12 17.5 41 15 11 5.5 1.7 3.3 ns ns ns ns nC nC nC nC S T M8309 P-Channel ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -5A VGS = -4.5V, ID= -4A VDS = -15V, VGS = -10V VDS = -15V, ID = - 5A Min Typ C Max Unit -30 -1 10 -1 -1.9 29 44 -20 8.5 870 225 125 -3 V uA uA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 35 m ohm 52 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VD = -15V, R L=15 ohm, ID = -1A, VGEN = -10V, RGEN =6 ohm VDS=-15V,ID=-5A,VGS=-10V VDS=-15V,ID=-5A,VGS=-4.5V VDS =-15V, ID = - 5A, VGS =-10V 3 12 18 70 40 15 7.5 1.7 4.5 ns ns ns ns nC nC nC nC S T M8309 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol b Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.8 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 5 40 VGS=10V 32 VGS=5V VGS=4.5V 20 VGS=4V 16 ID, Drain Current(A) ID, Drain Current (A) 24 12 Tj=125 C 8 -55 C 4 0 25 C VGS=3.5V 16 VGS=3V 8 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 60 1.5 Figure 2. Transfer Characteristics R DS (ON), On-R es is tance Normalized 50 1.4 1.3 1.2 1.1 1.0 0.9 -25 R DS (on) (m W) V G S =10V ID=7A 40 30 20 V G S =10V 10 1 V G S =4.5V V G S =4.5V ID=5A 1 8 16 24 32 40 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 S T M8309 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 49 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=7A Is , S ource-drain current (A) 42 10.0 R DS (on) (m W) 35 75 C 28 21 14 7 25 C 125 C 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8309 V G S , G ate to S ource V oltage (V ) 900 750 Ciss 10 8 6 4 2 0 VDS =15V ID=7A C, Capacitance (pF) 600 450 300 Coss 150 0 0 5 10 15 20 25 30 Crss 6 0 2 4 6 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance 250 S witching T ime (ns ) ID, Drain C urrent (A) Tr F igure 9. G ate C harge 40 10 ON S( )L im it 100 60 10 RD 10m 100 ms s T D(off) T D(on) Tf 11 DC 1s 1 1 V DS =15V ,ID=7A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance (W) F igure 11.s witching characteris tics V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area 6 S T M8309 P-Channel 20 16 VGS=10V VGS=5V VGS=4.5V 12 VGS=3.5V 8 VGS=3V 20 VGS=4V 125 C 16 -ID, Drain C urrent (A) -ID, Drain C urrent (A) 12 25 C 8 -55 C 4 0 4 0 0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 90 1.5 R DS (ON), On-R es is tance Normalized 75 1.4 1.3 1.2 1.1 1.0 V G S =-4.5V ID=-4A V G S =-10V ID=-5A R DS (on) (m W) 60 V G S =-4.5V 45 30 15 1 V G S =-10V 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) -ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 S T M8309 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.3 ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 100 90 20.0 ID =-5A -Is , S ource-drain current (A) 10.0 R DS (on) (m W) 80 60 125 C 40 20 0 75 C 25 C 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0 0.25 0.5 0.75 1.0 1.25 -V G S , G ate- S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8309 -V G S , G ate to S ource V oltage (V ) 1200 1000 Ciss 10 8 6 4 2 0 0 2 8 VDS =-15 V ID=-5A C, Capacitance (pF) 800 600 400 200 Crss 0 0 5 10 15 20 25 30 Coss 6 4 6 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance F igure 9. G ate C harge 250 Tr 50 10 RD )L im it -ID, Drain C urrent (A) S witching T ime (ns ) 100 60 10 T D(off) Tf ON S( 10m 100 1s DC s T D(on) 11 ms 1 1 V D S = -15V,I D=-1A V G S = -10 V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 6 10 60 100 300 600 R g, G ate R es is tance (W) -V DS , B ody Diode F orward V oltage (V ) F igure 11.s witching characteris tics F igure 10. Maximum S afe O perating Area 9 S T M8309 V DD ton V IN RL D VG S R GE N G 90% toff tr 90% td(on) V OUT V OUT 10% td(off) 90% 10% tf 5 INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 13. S witching T es t C ircuit F igure 14. S witching Waveforms N-C hannel 9 Normalized Transient 1 0.5 0.2 Thermal Resistance 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 9 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 S T M8309 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 11 |
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