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HSDL - 4261 High-Power T-13/4 (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet Description The HSDL-4261 Infrared emitter was designed for applicationsthatrequirehighpower,lowforwardvoltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs)LEDtechnologyandisoptimizedforspeedand efficiencyatemissionwavelengthsof870nm.Thematerial usedproduceshighradiantefficiencyoverawiderange ofcurrents.TheemitterispackagedinclearT-13/4(5mm) package. 5.00. Features * VeryHighPowerAlGaAsLEDTechnology * 870nmWavelength * T-13/4Package * LowCost * LowForwardVoltage:1.4Vat20mA * HighSpeed:15nsRiseTimes Applications * IndustrialIREquipments * IRPortableInstruments 8.70. 1.140. * ConsumerElectronics (Opticalmouseetc) * HighSpeedIRCommunications (IRLANs,IRModems,IRDonglesetc) 5.80. * IRAudio * IRTelephones 1.6min. 0.7max. .54 Part Number Lead Form Straight Shipping Option Bulk HSDL-4261 CATHODE FLAT 1.0min. 0.500.1 Absolute Maximum Ratings at 25C Parameter DCForwardCurrent PowerDissipation ReverseVoltage OperatingTemperature StorageTemperature LEDJunctionTemperature LeadSolderingTemperature Notes: 1. DerateasshowninFigure6. Symbol IFDC PDISS VR TO TS TJ Min. 5 -40 -40 - Max 100 190 70 100 110 260for5sec Unit mA mW V C C C C Reference [1],Fig.2 Electrical Characteristics at 25C Parameter ForwardVoltage ForwardVoltageTemperature Coefficient SeriesResistance DiodeCapacitance ReverseVoltage ThermalResistance,Junctionto Ambient Symbol VF DV/DT RS CO VR Rqja Min. 3 Typ. 1.4 1.7 -1.5 -1.3 4.1 80 14 280 Max. 1.5 1.9 Unit V mV/C Ohms pF V C/W Condition IFDC=20mA IFDC=100mA IFDC=20mA IFDC=100mA IFDC=100mA 0V,1MHz IR=100uA Reference Fig.2 Fig.3 Fig.4 Optical Characteristics at 25C Parameter RadiantOpticalPower RadiantOn-AxisIntensity RadiantOn-AxisIntensity TemperatureCoefficient ViewingAngle Peakwavelength PeakwavelengthTemperature Coefficient SpectralWidth OpticalRiseandFallTime Bandwidth Symbol PO IE DIE/DT 2q1/2 lPK Dl/DT Dl tr/tf fc Min. Typ. 9 45 36 180 -0.22 26 870 0.18 47 52 15 23 Max. Unit mW mW/Sr %/C deg nm nm/C nm ns MHz Condition IFDC=20mA IFDC=100mA IFDC=20mA IFDC=100mA IFDC=100mA IFDC=20mA IFDC=20mA IFDC=20mA IFDC=20mA IFDC=100mA Fig.1 Fig.7 Fig.1 Fig.5 Reference IFPK=500mA DutyFactor=33% PulseWidth=125ns 1. 1 RelativeRadiantIntensity 0.8 0.6 0.4 0. 0 750 PeakWavelengthat IFDC=0mA,TA=5oC 100 Forward Current, IFDC (mA) TA=5C 10 780 810 840 870 Wavelength(nm) 900 90 1 0.0 0. 0.4 0.6 0.8 1.0 1. Forward Voltage, VF (V) 1.4 1.6 1.8 Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage 1000 Peak Forward Current, IFPK (mA) .0 1.8 100 TA=5C ForwardVoltage,VF(V) IFDC=100mA 1.6 IFDC=0mA 1.4 10 1. 1 0.0 0.5 1.0 1.5 .0 .5 .0 .5 1.0 -40 -5 0 5 50 70 AmbientTemperature(oC) 85 100 Forward Voltage, VF (V) Figure 3. Peak Forward Current vs. Forward Voltage Figure 4. Forward Voltage vs. Ambient Temperature 5.0 100 DC Forward Current, IFDC (mA) RJA=00C/W 4.0 Relative Radiant Intensity (Normalized at 20mA) TA=5C .0 80 RJA=400C/W 60 40 0 0 RJA=500C/W .0 1.0 0.0 0 0 40 60 80 100 DC Forward Current, IFDC (mA) 0 10 0 0 40 50 Ambient Temperature, TA (C) 60 70 Figure 5. Relative Radiant Intensity vs. DC Forward Current Figure 6. DC Forward Current vs. Ambient Temperature Derated Based on TJMAX=1100C Figure 7. Radiant Intensity vs. Angular Displacement For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright (c) 2007 Lite-On Technology Corporation. All rights reserved. |
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