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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTC144WUPT CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=47k, Typ. ) (2) SC-70/SOT-323 (3) 1.30.1 0.30.1 0.65 2.00.2 0.65 (1) CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 1.250.1 MARKING WUB Gnd In 1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 PARAMETER Supply voltage Input voltage CONDITIONS - MIN. MAX. 50 +40 30 V V UNIT -10 - - Tamb 25 OC, Note 1 - -55 - junction - soldering point - mA 100 200 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTC144WUPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=2mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=5mA; VO=5.0V - - - - 56 32.9 0.37 - MIN. 0.8 - - 0.1 - - - 47 0.47 250 TYP. - 3.0 0.3 0.16 0.5 - 61.1 0.57 - K MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp300uS; 0.02. |
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