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| FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 SOT-23 Unit V V V A mW C C 2 Maximum Ratings Rating Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Power Dissipation TA=25C Junction Temperature Range Storage Temperature Range Symbol V(BR)CEO V(BR)CBO V(BR)EBO IC PD TJ TSTG Value -60 -80 -5.0 -1.0 500 +150 -55 to +150 Device Marking FMMT591=591 Electrical Characteristics (TA=25C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collent-Emitter Breakdown Voltage1 IC = -1.0mA, IB = 0 Collent-Base Breakdown Voltage IC = -100A, IE = 0 Collent Cutoff Current IC = 0, IE = -100A Collector Cut-off Current VCB = -60V, IE = 0 Emitter Cut-off Current VEB = -4.0V, IC = 0 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -60 -80 -5.0 -0.1 -0.1 V V V A A WEITRON http://www.weitron.com.tw 1/4 23-Jan-06 FMMT591 Electrical Characteristics (TA=25C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit On Characteristics (1) DC Current Gain VCE= -5.0V, IC= -1.0mA VCE= -5.0V, IC= -500mA VCE= -5.0V, IC= -1.0A VCE= -5.0V, IC= -2.0A Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA IC = -1.0A, IB = -100mA Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA Base-Emitter Saturation Voltage VCE = -5.0A, IC = -1.0A hFE1 hFE2 hFE3 hFE4 VCE(sat) 100 100 80 15 300 -0.3 -0.6 -1.2 -1.0 - - - V VBE(sat) VBE V V Small-signal Characteristics Transition Frequency VCE = -10V, IC = -50mA, f = 100MHz Output Capacitance VCB = -10V, f = 1.0MHz fT Cob 150 10 MHz pF 1. Measured under pulsed conditions, Pulse width = 300s, Duty cycle 2%. http://www.weitron.com.tw WEITRON 2/4 23-Jan-06 FMMT591 TYPICAL TRANSIENT CHARACTERISTICS 0.6 0.5 +25C 0.6 0.5 IC/IB=10 VCE(sat) (V) VCE(sat) (V) 0.4 0.3 0.2 0.1 0 1 10 100 1000 10000 0.4 0.3 0.2 0.1 0 1 10 100 1000 10000 IC/IB=10 IC/IB=50 -55C +25C +100C IC-Collector Current (mA) IC-Collector Current (mA) Fig.1 VCE(sat) vs IC Fig.2 VCE(sat) vs IC 400 +100C VCE=5V 1.0 IC/IB=10 hFE - Typical Gain +25C 200 VBE(sat) (V) 300 0.8 0.6 0.4 0.2 0 -55C 100 0 -55C +25C +100C 1 10 100 1000 10000 1 10 100 1000 10000 IC-Collector Current (mA) IC-Collector Current (mA) Fig.3 hFE vs IC Fig.4 VBE(sat) vs IC 1.2 1.0 IC-Collector Current (A) VCE=5V 10 VBE(on) (V) 0.8 0.6 0.4 0.2 0 1 -55C +25C +100C 0.1 DC 1s 100ms 10ms 1ms 100s 1 10 100 1 10 100 1000 10000 0.01 0.1 IC-Collector Current (mA) Fig.5 VBE(on) vs IC VCE-Collector Emitter Voltage (V) Fig.6 Safe Operating Area http://www.weitron.com.tw WEITRON 3/4 23-Jan-06 FMMT591 SOT-23 Package Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw 4/4 23-Jan-06 |
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