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| EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET FEATURES * * * * * * * * 14.40- 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 5 dB Power Gain at 1dB Compression 23% Power Added Efficiency -44 dBc IM3 at Po = 30 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC1415-12 .827.010 .669 .120 MIN .024 .421 YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ 3200mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 3200mA f = 14.40-15.40GHz Drain Current at 1dB Compression f = 14.40-15.40GHz Caution! ESD sensitive device. MIN 40 4 TYP 41 5 MAX UNITS dBm dB 0.7 23 3700 -41 -44 9000 -2.5 1.8 13000 -4.0 2.1 o dB % 4200 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 30 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 15.40GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 84 mA Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS ABSOLUTE 15V -5V Output power reach 3dB Gain Compression point 175C -65C to +175C 71W 1 OPERATING 10V -4V 2 Vds Vgs Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation (Tc=25) Output power reach 3dB Gain Compression point 175C -65C to +175C 71W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 1 of 3 Revision. 01 EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET PERFORMANCE DATA 10 5 0 dB(S(1,2)) dB(S(2,1)) S(2,2) S(1,1) -5 -10 -15 -20 14.0 14.2 14.4 14.6 14.8 15.0 15.2 15.4 15.6 15.8 freq (14.10GHz to 15.70GHz) freq, GHz Frequency GHZ 14.10 14.20 14.30 14.40 14.50 14.60 14.70 14.80 14.90 15.00 15.10 15.20 15.30 15.40 15.50 15.60 15.70 S11 MAG 0.501 0.500 0.499 0.507 0.511 0.513 0.521 0.522 0.515 0.506 0.490 0.462 0.436 0.399 0.351 0.310 0.264 ANG -165.9 178.5 164.3 150.8 138.2 127.1 116.4 105.3 94.9 84.5 73.8 63.1 51.9 39.3 25.2 9.6 -10.7 MAG 0.127 0.131 0.132 0.135 0.137 0.139 0.142 0.144 0.147 0.151 0.154 0.156 0.159 0.161 0.162 0.162 0.162 S12 ANG 23.5 13.7 4.6 -4.7 -13.1 -22.4 -30.9 -39.9 -48.3 -57.1 -66.5 -75.7 -85.1 -94.9 -104.8 -115.1 -124.9 MAG 2.02 2.02 2.02 2.03 2.02 2.02 2.03 20.4 2.05 2.06 2.06 2.06 2.07 2.07 2.06 2.04 2.00 S21 ANG 55.8 45.8 36.1 26.5 17.3 8.2 -0.95 -10.2 -19.8 -29.5 -39.1 -49.2 -59.5 -69.9 -80.5 -91.4 -102.5 MAG 0.451 0.422 0.389 0.365 0.335 0.300 0.265 0.233 0.190 0.140 0.094 0.054 0.039 0.076 0.128 0.185 0.244 S22 ANG -8.1 -13.1 -18.1 -22.8 -28.3 -33.5 -37.9 -43 -51.7 -60 -72.2 -94.1 -170.6 132.5 111.5 100.2 91.9 Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ 3200mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 2 of 3 Revision. 01 EIC1415-12 14.40-15.40GHz 12-Watt Internally Matched Power FET P1dB V.S Frequency 43 10 G1dB V.S Frequency 39 8 P1dB/dBm G1dB/dB 35 6 31 4 27 2 23 14.2 14.4 14.6 14.8 15 15.2 15.4 15.6 0 14.2 14.4 14.6 14.8 15 15.2 15.4 15.6 Frequency/GHz Frequency/GHz VDS = 10 V, IDSQ 3200mA DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Page 3 of 3 Revision. 01 |
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