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MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
CM600HX-12A
IC ................................................................... 600A VCES ............................................................ 600V Single Flatbase Type / Insulated Package / Copper (non-plating) base plate RoHS Directive compliant
APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152 137 121.7 110 0.5 99 94.5
Dimensions in mm
(3.81) (13.5) 7 4-M6 NUTS (3) 1.15 0.65
(13.5)
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
(14) (14) 22 17 17 12 12 6 6
TERMINAL t = 0.8
24
47
39 50 0.5 57.5 62
(7.4) 1.2
4.3
48
23
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
4.2
95 (102.25)
68.33 72.14
6.5 (21.14)
0.8
A
4-5.5 MOUNTING HOLES
3.5
0 (7.75)
15 18.8
13 17 (20.5)
(5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5
Pin positions with tolerance
12.5
SECTION A
1.5
2.5 2.1
0.5
LABEL
C (47)
E (24)
Division of Dimension 0.5 over over over 3 6 30 to to to to to 3 6 30 120 400
Tolerance 0.2 0.3 0.5 0.8 1.2
C (48) TH1 (1)
NTC TH2 (2) G1 (15) E1 (16) C (22)
E (23)
* Use both terminals (C/E) to the external connection. CIRCUIT DIAGRAM
over 120
Jan. 2009
MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso -- -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage
(Tj = 25C, unless otherwise specified)
Conditions G-E Short C-E Short (Note. 1) DC, TC = 55C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25C (Note. 1) Emitter current TC = 25C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerilne X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical)
Rating 600 20 600 1200 1890 600 1200 -40 ~ +150 -40 ~ +125 2500 0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330
Unit V A W A C Vrms m N*m g
Note. 8: The base plate flatness measurement points are in the following figure.
-
-
-
Jan. 2009 2
MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter
(Tj = 25C, unless otherwise specified)
Conditions
VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 60mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 600A, VGE = 15V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = 15V, RG = 1.0 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6)
(IE = 600A) IE = 600A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip
VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG
IE = 600A, VGE = 0V Module lead resistance Main terminals-chip Thermal resistance per IGBT (Note. 1) per free wheeling diode (Junction to case) Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) TC = 25C Internal gate resistance TC = 125C External gate resistance
Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 4.2 1
Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 1600 -- -- -- -- -- 11 2.0 1.95 1.9 0.6 -- -- 0.03 3 6 --
Max. 1 7 0.5 2.1 -- -- 69 8 2.4 -- 700 250 700 600 300 -- 2.8 -- -- -- 0.066 0.11 -- 3.9 7.8 10
Unit mA V A V
nF nC
ns
C V m
K/W
(Note. 2)
NTC THERMISTOR PART
Symbol R R/R B(25/50) P25
Note.1: 2: 3: 4: 5: 6:
Parameter Zero power resistance Deviation of resistance B constant Power dissipation
Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C
(Note. 7)
Min. 4.85 -7.3 -- --
Limits Typ. 5.00 -- 3375 --
Max. 5.15 +7.8 -- 10
Unit k % K mW
Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K]
Jan. 2009 3
MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
Chip Location (Top view)
Dimensions in mm (tolerance: 1mm)
(152) (121.7) (110) 0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
Tr Di Tr Di
24
21.8
(62)
(50)
35.2
23
48
Th
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44.2
Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor
C(Cs)
C IC V VGE = 0V
77.5 78.6 88.6
LABEL SIDE
0
C(Cs)
C IE
V
VGE = 15V
G E(Es)
G E(Es)
E
E
VCE(sat) test circuit
VEC test circuit
VGE 0V Load -VGE IE + VCC IC
90% 0%
IE trr
90% +VGE 0V -VGE
0A
t
RG
VCE
VGE
IC 0A td(on) tr td(off) tf
Irr 10%
1/2 Irr Qrr = 1/2 Irr trr
Switching time test circuit and waveforms
trr, Qrr test waveform
Jan. 2009 4
MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
VGE = 20V
15 13
1000 800 600 400
Tj = 25C 12
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1200
3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 0 200 400 600 Tj = 25C Tj = 125C 800 1000 1200
11
10 200 0 9 8 0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 104
7 5 3 2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
10
Tj = 25C
8
EMITTER CURRENT IE (A)
103
7 5 3 2
6
4
IC = 600A IC = 1200A
102
7 5 3 2
2 IC = 240A 0 6 8 10 12 14 16 18 20
101
0
0.5
1
1.5
2
Tj = 25C Tj = 125C 2.5 3 3.5 4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 Conditions: VCC = 300V VGE = 15V RG = 1 tf 103 Tj = 125C 7 Inductive load
7 5 3 2 5 3 2 7 5 3 2
Cies
101
7 5 3 2
SWITCHING TIME (ns)
CAPACITANCE (nF)
td(on) td(off)
Coes
100
7 5 3 2
102
Cres
tr
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
101 1 10
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Jan. 2009 5
MITSUBISHI IGBT MODULES
CM600HX-12A
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104
7
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 300V VGE = 15V 3 RG = 1 Tj = 125C 2 Inductive load
7 5
5
SWITCHING LOSS (mJ/pulse)
SWITCHING TIME (ns)
3 2
Eoff Eon
103
7 5 3 2
td(on) td(off) Conditions: tr VCC = 300V VGE = 15V tf IC = 600A Tj = 125C Inductive load
2 3 5 7 101 2 3 5 7 102
101
7 5 3 2
Err
102 0 10
100 1 10
2
3
5 7 102
2
3
5 7 103
GATE RESISTANCE RG ()
COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 1 Tj = 25C 2 Inductive load Irr trr 2 10
7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102
7
SWITCHING LOSS (mJ/pulse)
5 3 2
Eon Eoff
101
7 5 3 2
100 0 10
Err Conditions: VCC = 300V VGE = 15V IC, IE = 600A Tj = 125C Inductive load
2 3 5 7 101 2 3 5 7 102
lrr (A), trr (ns)
101 1 10
2
3
5 7 102
2
3
5 7 103
GATE RESISTANCE RG ()
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100
7 Single pulse 5 TC = 25C 3 2 7 5 3 2
GATE-EMITTER VOLTAGE VGE (V)
IC = 600A VCC = 200V
15
VCC = 300V
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
10-1
10
10-2
7 5 3 2 Inverter IGBT part : Per unit base = Rth(j-c) = 0.066K/W
5
0
0
500
1000
1500
2000
2500
Inverter FWDi part : Per unit base = Rth(j-c) = 0.11K/W 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s)
GATE CHARGE QG (nC)
Jan. 2009 6

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