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APT100GT120JRDQ4
1200V, 100A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
E G C
E
Features
* Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
7 22 TSO
"UL Recognized"
file # E145592
* RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
ISOTOP (R)
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified. Ratings
1200 20 123 67 200 200A @ 1200V 570 -55 to 150 300 C Watts Amps Volts
Unit
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
Min
1200 4.5 2.7 -
Typ
5.5 3.2 4.0 5
Max
6.5
Unit
Volts 3.7 200 TBD 600 A nA
052-6290 Rev C 6-2008
ICES IGES RG(int)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
APT100GT120JRDQ4
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Min Gate Charge VGE = 15V VCE= 600V IC = 100A TJ = 150C, RG = 1.0 , VGE = 15V,
7
Typ 7850 650 275 10.0 685 75 400
Max -
Unit
pF
150 -
V
nC
L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V IC = 100A RG = 4.7 TJ = +25C
A 50 100 630 36 TBD 17600 7240 50 100 710 37 TBD 22380 10950 ns ns J J
-
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 100A RG = 4.7 TJ = 125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R R
JC JC
Min
2500
Typ
29.2 -
Max
0.22
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
0.56 g Volts
WT VIsolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
052-6290 Rev C 6-2008 Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
150 125 TJ= 25C 100 TJ= 125C 75 50 25 0 TJ= 150C
V
GE
APT100GT120JRDQ4
250 15V 13V 12V IC, COLLECTOR CURRENT (A) 200 11V 150 10V 100 9V 50 8V 7V
= 15V
IC, COLLECTOR CURRENT (A)
150 125 100 75 50 25 0
0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
16 14 12 10
0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 100A C T = 25C
J
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
8 6 4 2 0 0 100
VCE = 960V
TJ= -55C TJ= 25C TJ= 125C 0 10 12 14 4 6 8 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 2
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8 7 6 5 4 3 2 1
7 6 5 4 3 2 1 0
200 300 400 500 600 GATE CHARGE (nC) FIGURE 4, Gate charge
700
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 200A IC = 100A IC = 50A
IC = 200A IC = 100A IC = 50A
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 100 80 60 40 20 0
0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
052-6290 Rev C 6-2008
Typical Performance Curves
80 70 60 50 40 30 20 10 0 0
VCE = 800V TJ = 25C, or 125C RG = 4.7 L = 100H
APT100GT120JRDQ4
900 td(OFF), TURN-OFF DELAY TIME (ns) 800 700 600 500 400 300 200 100 0
VCE = 800V RG = 4.7 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 350 300 250 tr, RISE TIME (ns) tr, FALL TIME (ns) 200 150 100 50 0
TJ = 25 or 125C,VGE = 15V RG = 4.7, L = 100H, VCE = 800V
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100 80
TJ = 25C, VGE = 15V RG = 4.7, L = 100H, VCE = 800V
60 40
TJ = 125C, VGE = 15V
20 0
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 80000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 70000 60000 50000 40000 30000 20000 10000 0
TJ = 25C TJ = 125C
V = 800V CE V = +15V GE R = 4.7
G
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 18000 16000 14000 12000 10000 8000 6000 4000 2000 0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 80000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 4.7
G
V = 800V CE V = +15V GE R = 4.7
G
TJ = 125C
TJ = 25C
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 160000 SWITCHING ENERGY LOSSES (J) 140000 120000 100000 80000 60000 40000 20000 0 0
Eoff,200A Eon2,100A Eoff,100A Eon2,50A Eoff,50A
V = 800V CE V = +15V GE T = 125C
J
0
Eon2,200A
Eon2,200A
70000 60000 50000 40000 30000
052-6290 Rev C 6-2008
Eoff,200A
20000 10000 0 0
Eon2,100A Eoff,100A Eon2,50A Eoff,50A
4 8 12 16 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 250
APT100GT120JRDQ4
1000
150
Coes 100 Cres
100
50
0 100 200 300 400 500 600 700 800 900 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9
0. 2
0.15
0.7 0.5
PDM
0. 1 0.3 0.05 0.1 0 10-4 0.05 10-3 SINGLE PULSE
Note:
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-1 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40 FMAX, OPERATING FREQUENCY (kHz)
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.7
G
30
75C
F
TJ (C)
TC (C)
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
20
fmax2 =
10
100C
ZEXT
.045
Dissipated Power (Watts)
.0135 .0618
.039 17.42
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
.034
Pdiss =
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
0
10
052-6290 Rev C 6-2008
APT100GT120JRDQ4
10% Gate Voltage
a -46.0ns 780.4V b 422ns 34.13V 468ns 746.3V
td(on)
TJ = 125C
APT100DQ120
Collector Current tr
V CC IC V CE
90% 5% 10% 5% Collector Voltage
Switching Energy
A D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
Figure 22, Turn-on Switching Waveforms and Definitions
TJ = 125C Gate Voltage
a -226ns 97.34V b 928ns 0.000V 1.15s 97.34V
Collector Voltage
90% td(off) tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6290 Rev C 6-2008
Typical Performance Curves
APT100GT120JRDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 88C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT100GT120JRDQ4
60 73 540 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 75A VF Forward Voltage IF = 150A IF = 75A, TJ = 125C
Min
Type
2.8 3.48 2.17
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 , THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 D = 0.9
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
Min
-
Typ 60 265 560 5 350 2890 13 150 4720 40
Max
-
Unit
ns nC Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.7
0.5
Note:
PDM
0.3
t1 t2
JC
Z
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.148 Dissipated Power (Watts) 0.006 0.0910 0.524 0.238
TC (C)
0.174
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6290 Rev C 6-2008
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
Typical Perfromance Curves
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C 400 120A 350 300 250 200 150 100 50
APT100GT120JRDQ4
T = 125C J V = 800V
R
60A 30A
TJ = 25C TJ = -55C
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC) 6000 5000 4000 3000 2000 1000 0 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0 30A 60A
T = 125C J V = 800V
R
0
120A
120A
60A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr IRRM Qrr trr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 90 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6290 Rev C 6-2008
APT100GT120JRDQ2
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's prod 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6290 Rev C 6-2008

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