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| Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 General Description The AP2128 Series are positive voltage regulator ICs fabricated by CMOS process. The AP2128 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable output voltage mode needs two resistors as a voltage divider The AP2128 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2128 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 3.9V, 4.2V, 4.75V, 5.2V fixed voltage versions and 0.8V to 5.5V adjustable voltage version. AP2128 series are available in SOT-23-5 Package. Features * * * * * * * * * * * * * Wide Operating Voltage: 2.5V to 6V Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V High Output Voltage Accuracy: 2% High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz Low Standby Current: 0.1A Low Quiescent Current: 60A Typical Low Output Noise: 60Vrms@VOUT=0.8V Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1F for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50s Auto Discharge Resistance: RDS(ON)=60 Applications * * * Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2128 Oct. 2009 Rev. 1.8 1 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Pin Configuration K Package (SOT-23-5) Shutdown GND VIN 1 2 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2128 (Top View) Functional Block Diagram SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT GND Fixed Version Oct. 2009 Rev. 1.8 2 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Functional Block Diagram (Continued) SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT ADJ GND Adjustable Version Figure 3. Functional Block Diagram of AP2128 Oct. 2009 Rev. 1.8 3 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Ordering Information AP2128 Circuit Type G1: Green TR: Tape and Reel Package K: SOT-23-5 ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 3.9: Fixed Output 3.9V 4.2: Fixed Output 4.2V 4.75: Fixed Output 4.75V 5.2: Fixed Output 5.2V Product Package Temperature Range Part Number AP2128K- ADJTRG1 AP2128K-1.0TRG1 AP2128K-1.2TRG1 AP2128K-1.5TRG1 AP2128K-1.8TRG1 AP2128K-2.5TRG1 FAD FAJ FAK Marking ID Packing Type Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel GAN GAP GAQ GAR GAW FAL GBU GAZ GFZ GAV AP2128 SOT-23-5 -40 to 85 C o AP2128K-2.8TRG1 AP2128K-3.0TRG1 AP2128K-3.3TRG1 AP2128K-3.9TRG1 AP2128K-4.2TRG1 AP2128K-4.75TRG1 AP2128K-5.2TRG1 BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2009 Rev. 1.8 4 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Absolute Maximum Ratings (Note 1) Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance ESD (Human Body Model) ESD (Machine Model) Symbol VIN VCE IOUT TJ TSTG TLEAD JA ESD ESD Value 6.5 -0.3 to VIN+0.3 450 150 -65 to 150 260 250 6000 200 Unit V V mA oC oC o C oC/W V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TA Min 2.5 -40 Max 6 85 Unit V oC Oct. 2009 Rev. 1.8 5 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (AP2128-ADJ, VIN min=2.5V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Current Limit Load Regulation Line Regulation Quiescent Current Standby Current Symbol VREF VIN IOUT(MAX) ILIMIT VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) IQ ISTD VIN=2.5V, VOUT=98%xVOUT VIN=2.5V VIN=2.5V, 1mAIOUT300mA VIN=2.5V to 6V IOUT=30mA VIN=2.5V, IOUT=0mA VIN=2.5V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit Soft Start Time RMS Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 PSRR Ripple 1Vp-p VIN=3V f=1KHz f=10KHz (VOUT/VOUT) /T ISHORT tUP VNOISE TA=25 C, 10Hz f100kHz, VOUT=0.8V Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150 o Conditions VIN=2.5V 1mAIOUT300mA Min 0.784 2.5 300 Typ 0.8 Max 0.816 6 Unit V V mA mA 400 450 0.6 0.06 60 0.1 68 68 54 90 1.0 %/A %/V A A dB dB dB ppm/oC mA s IOUT=30mA, -40oCTA85oC VOUT=0V 100 50 50 60 6 0.4 Vrms V V M oC oC oC/W Oct. 2009 Rev. 1.8 6 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Current Limit Load Regulation Line Regulation Symbol VOUT VIN IOUT(MAX) ILIMIT VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VIN=2.5V, VOUT=98%xVOUT VIN=2.5V VIN=2.5V, 1mAIOUT300mA VIN=2.5V to 6V IOUT=30mA VOUT=1.0V, IOUT=300mA Dropout Voltage VDROP VOUT=1.2V, IOUT=300mA VOUT=1.5V, IOUT=300mA VOUT=1.8V, IOUT=300mA Quiescent Current Standby Current IQ ISTD VIN=2.5V, IOUT=0mA VIN=2.5V, VSHUTDOWN in off mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit Soft Start Time Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 PSRR Ripple 1Vp-p VIN=3V f=1KHz f=10KHz (VOUT/VOUT) /T ISHORT tUP Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150 IOUT=30mA, -40oCTA85oC VOUT=0V 1400 1200 900 600 60 0.1 68 68 54 Conditions VIN=2.5V 1mAIOUT300mA Min 98%x VOUT 2.5 300 400 450 0.6 0.06 1500 1300 1000 700 90 1.0 A A dB dB dB ppm/oC mA s 6 0.4 V V M oC oC oC/W Typ Max 102%x VOUT 6 Unit V V mA mA %/A %/V mV 100 50 50 Oct. 2009 Rev. 1.8 7 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Current Limit Load Regulation Line Regulation Symbol VOUT VIN IOUT(MAX) ILIMIT VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VIN-VOUT=1V, VOUT=98%xVOUT VIN-VOUT=1V VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V, IOUT=30mA VOUT=2.5V, 2.8V, 3.0V, 3.3V, 3.9V, 4.2V, IOUT=300mA VOUT=4.75V and 5.2V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode AP2128-2.5V to f=100Hz 4.2V, Ripple f=1KHz 1Vp-p VIN=VOUT+1V f=10KHz Power Supply Rejection Ratio f=100Hz AP2128-4.75V , Ripple 0.5Vp-p f=1KHz VIN=VOUT+1V f=10KHz AP2128-5.2V , Ripple 0.5Vp-p VIN=6V Output Voltage Temperature Coefficient Short Current Limit (VOUT/VOUT) /T ISHORT f=100Hz f=1KHz f=10KHz 170 140 60 0.1 68 68 54 63 63 45 63 63 45 dB Conditions VIN=VOUT+1V 1mAIOUT300mA Min 98%x VOUT 2.5 300 400 450 0.6 0.06 300 mV 300 90 1.0 A A Typ Max 102%x VOUT 6 Unit V V mA mA %/A %/V Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD PSRR IOUT=30mA, -40oCTA85oC VOUT=0V 100 50 ppm/oC mA Oct. 2009 Rev. 1.8 8 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1F, COUT=1F, Bold typeface applies over -40oCTA85oC, unless otherwise specified.) Parameter Soft Start Time Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis Thermal Resistance JC SOT-23-5 Symbol tUP Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" 1.5 0 60 3 165 30 150 o Conditions Min Typ 50 Max Unit s 6 0.4 V V M o C oC C/W Oct. 2009 Rev. 1.8 9 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics 1.0 3.5 0.9 3.0 0.8 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 Output Voltge (V) Output Voltage (V) 0.6 2.0 0.5 1.5 0.4 0.3 1.0 0.2 0.5 0.1 0.0 0.0 00 50 100 100 150 200 200 250 Tc=-40 C o TC=-40 C o Tc=25 C T =25oC Tc=85 C TC=125 C VIN =0.8V Vin=2.5V, V=4.4V out 300 300 350 400 400 450 500 500 o C o o Output Voltage (V) 0.7 2.5 TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V 0.1 0.2 0.3 0.4 0.5 o o o Output Current (mA) Output Current (V) Output Current (A) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 6.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 5.5 5.0 4.5 Output Voltage (V) Output Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 VIN=3.8V VIN=4.3V VIN=6V TC=25 C, VOUT=3.3V 0.1 0.2 0.3 0.4 0.5 0 TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V 0.4 0.5 o o o Output Current (A) Output Current (A) Figure 6. Output Voltage vs. Output Current Figure 7. Output Voltage vs. Output Current Oct. 2009 Rev. 1.8 10 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 240 220 200 180 180 TC=-40 C TC=25 C TC=85 C VOUT=3.3V Dropout Voltage (mV) o o o 160 140 120 100 80 60 40 20 0 0.00 TC=-40 C TC=25 C TC=85 C VIN=6V, VOUT=5.2V o o o Dropout Voltage (mV) 160 140 120 100 80 60 40 20 0 50 100 150 200 250 300 0.05 0.10 0.15 0.20 0.25 0.30 Output Current (mA) Output Current (A) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 0.20 0.18 0.16 160 150 140 130 120 IOUT=10mA IOUT=150mA IOUT=300mA VIN=6V, VOUT=5.2V Dropout Voltage (mV) 80 0.14 Dropout Voltage (V) 110 100 90 80 70 60 50 40 30 20 10 0 -40 -20 0 20 40 o 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -40 IOUT=10mA IOUT=150mA IOUT=300mA VIN=4.3V, VOUT=3.3V -20 0 20 40 o 60 60 80 Case Temperature ( C) Case Temperature ( C) Figure 10. Dropout Voltage vs. Case Temperature Figure 11. Dropout Voltage vs. Case Temperature Oct. 2009 Rev. 1.8 11 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 120 115 110 105 115 TC=-40 C TC=25 C Quiescent Current (A) o o o 110 105 100 95 90 85 80 75 70 65 TC=-40 C TC=25 C TC=85 C VIN=4.3V, VOUT=3.3V o o o Quiescent Current (A) 100 95 90 85 80 75 70 65 60 55 50 0 TC=85 C VIN=2.5V, VOUT=0.8V 50 100 150 200 250 300 0 50 100 150 200 250 300 Output Current (mA) Output Current (mA) Figure 12. Quiescent Current vs. Output Current Figure 13. Quiescent Current vs. Output Current 70 115 110 105 100 95 90 85 80 75 0.00 0.05 0.10 0.15 0.20 0.25 0.30 TC=-40 C TC=25 C VIN=6V, VOUT=5.2V o o o 68 66 IOUT=0 VIN=2.5V, VOUT=0.8V Quiescent Current (A) Quiescent Current (A) TC=85 C 64 62 60 58 56 54 52 50 -40 -20 0 20 40 60 o 80 100 120 Output Current (A) Case Temperature ( C) Figure 14. Quiescent Current vs. Output Current Figure 15. Quiescent Current vs. Case Temperature Oct. 2009 Rev. 1.8 12 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 71 70 69 IOUT=0 VIN=4.3V, VOUT=3.3V 74 72 Quiescent Current (A) 68 67 66 65 64 63 62 -40 Quiescent Current (A) 70 68 66 64 IOUT=0 62 60 -40 VIN=6V, VOUT=5.2V -20 0 20 40 60 o -20 0 20 40 60 o 80 100 120 80 100 120 Case Temperature ( C) Case Temperature ( C) Figure 16. Quiescent Current vs. Case Temperature Figure 17. Quiescent Current vs. Case Temperature 80 70 60 80 70 60 Quiescent Current (A) Quiescent Current (A) 50 40 30 20 10 0 1.0 50 40 30 20 10 0 TC=25 C VOUT=0.8V, IOUT=0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 o TC=25 C IOUT=0, VOUT=3.3V 0 1 2 3 4 5 6 o Input Voltage (V) Input Voltage (V) Figure 18. Quiescent Current vs. Input Voltage Figure 19. Quiescent Current vs. Input Voltage Oct. 2009 Rev. 1.8 13 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 80 70 TC=25 C IOUT=0, VOUT=5.2V o 0.807 V =2.5V, CIN=COUT=1F IN IOUT=10mA, Vout=0.8V 0.806 Quiescent Current (A) 60 Output Voltage (V) 50 40 30 20 0.805 0.804 0.803 0.802 10 0 0.801 -40 0 1 2 3 4 5 6 -20 0 20 40 60 o 80 100 120 Input Voltage (V) Case Temperature ( C) Figure 20. Quiescent Current vs. Input Voltage Figure 21. Output Voltage vs. Case Temperature 5.250 3.348 3.346 3.344 3.342 IOUT=10mA VIN=4.3V, VOUT=3.3V 5.245 5.240 5.235 IOUT=10mA VIN=6V, VOUT=5.2V Output Voltage (V) Output Voltage (V) 3.340 3.338 3.336 3.334 3.332 3.330 3.328 3.326 -40 -20 0 20 40 60 o 5.230 5.225 5.220 5.215 5.210 5.205 5.200 80 100 120 5.195 -40 -20 0 20 40 60 o 80 100 120 Case Temperature ( C) Case Temperature ( C) Figure 22. Output Voltage vs. Case Temperature Figure 23. Output Voltage vs. Case Temperature Oct. 2009 Rev. 1.8 14 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 34 VIN=2.5V, VOUT=0.8V, CIN=COUT=1F 56 54 52 VIN=6V, VOUT=5.2V 32 50 Short Current (mA) Short Current (mA) -20 0 20 40 60 o 48 46 44 42 40 38 36 34 30 28 26 -40 80 100 120 32 30 -40 -20 0 20 40 60 o 80 100 120 Case Temperature ( C) Case Temperature ( C) Figure 24. Short Current vs. Case Temperature Figure 25. Short Current vs. Case Temperature 1.0 0.9 0.8 1.0 0.9 0.8 Output Voltge (V) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 Output Voltge (V) 0.7 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TC=-40 C TC=25 C TC=85 C VOUT=0.8V 6 7 8 o o o TC=-40 C TC=25 C TC=85 C VOUT=0.8V 0 1 2 3 4 5 6 o o o 0.0 Input Voltage (V) Input Voltage (V) Figure 26. Output Voltage vs. Input Voltage (IOUT=0mA) Figure 27. Output Voltage vs. Input Voltage (IOUT=300mA) Oct. 2009 Rev. 1.8 15 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 6 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 TC=-40 C TC=25 C TC=85 C Output Voltage (V) IOUT=0, VOUT=3.3V 4 o o o 5 TC=-40 C TC=25 C TC=85 C IOUT=0, VOUT=5.2V o o o Output Voltage (V) 3 2 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 1 2 3 4 5 6 Input Voltage (V) Input Voltage (V) Figure 28. Output Voltage vs. Input Voltage Figure 29. Output Voltage vs. Input Voltage 2.0 1.8 1.6 VOUT=0.8V No heatsink Power Dissipation (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IOUT VOUT -20 0 20 40 60 o 80 100 120 Case Temperature( C) Figure 30. Power Dissipation vs. Case Temperature Figure 31. Load Transient (Conditions: CIN=COUT=1F, VIN=2.5V, VOUT=0.8V, IOUT=10mA to 300mA) Oct. 2009 Rev. 1.8 16 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) IOUT VIN VOUT VOUT Figure 32. Load Transient (Conditions: CIN=COUT=1F, VIN=4.4V, VOUT=3.3V IOUT=10mA to 300mA) Figure 33. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=2.5 to 3.5V, VOUT=0.8V) VIN VOUT VOUT VShutdown Figure 34. Line Transient (Conditions: IOUT=30mA, CIN=COUT=1F, VIN=4 to 5V, VOUT=3.3V) Figure 35. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=3.3V) Oct. 2009 Rev. 1.8 17 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 100 90 80 70 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=0.8V PSRR (dB) VOUT 60 50 40 30 20 10 0 100 1000 10000 100000 VShutdown Frequency (Hz) Figure 36. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1F, VShutdown=0 to 2V, VOUT=0.8V) Figure 37. PSSR vs. Frequency 100 90 80 70 70 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1F, VOUT=3.3V 60 50 PSRR (dB) 60 50 40 30 20 10 0 100 1000 10000 100000 10 PSRR (dB) 40 30 20 IOUT=10mA IOUT=300mA VOUT=5.2V, COUT=1F, ripple=0.5Vpp 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 38. PSRR vs. Frequency Figure 39. PSRR vs. Frequency Oct. 2009 Rev. 1.8 18 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Application VIN VIN VOUT VOUT AP2128 Shutdown CIN 1F GND ADJ R1 COUT 1F R2 VOUT=0.8*(1+R1/R2) V VIN VOUT VIN VOUT AP2128 Shutdown CIN 1F COUT 1F GND VOUT=1.0V to 5.2V Figure 40. Typical Application of AP2128 Oct. 2009 Rev. 1.8 19 BCD Semiconductor Manufacturing Limited Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 1.500(0.059) 1.700(0.067) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0 8 1.450(0.057) MAX 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.300(0.051) Oct. 2009 Rev. 1.8 20 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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