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| AGR18060E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and singlecarrier or multicarrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today's wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18060EU AGR18060EF Sym Value 1.00 1.00 Unit C/W C/W Ri JC Ri JC Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR18060EU AGR18060EF Derate Above 25 C: AGR18060EU AGR18060EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS -0.5, 15 Vdc PD PD -- -- TJ 175 175 1.00 1.00 200 W W W/C W/C C C AGR18060EU AGR18060EF Figure 1. Available Packages Features Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mA -- Output power (POUT): 20 W. -- Power gain: 15 dB. -- Efficiency: 34%. -- Modulation spectrum: @ 400 kHz = -62 dBc. @ 600 kHz = -73 dBc. -- Error vector magnitude (EVM) = 2%. Typical performance over entire GSM band: -- P1dB: 60 W typ. -- Power gain: @ P1dB = 14 dB. -- Efficiency @ P1dB = 52% typical. -- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continuous wave (CW) output power. Large signal impedance parameters available. TSTG -65, 150 * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR18060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR 18060 E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter = 300A Drain-source Breakdown Voltage (VGS = 0 V, ID = 90 A) Symbol Off Characteristics V(BR)DSS IGSS IDSS GFS Min 65 -- -- -- -- -- -- Typ -- Max -- Un i t Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) -- -- Forward Transconductance (VDS = 10 V, ID = 0.45 A) Gate Threshold Voltage (VDS = 10 V, ID = 180 A) Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.45 A) Table 5. RF Characteristics Parameter On Characteristics 5.5 100 -- -- 1.8 Adc Adc S VGS(th) VDS(on) VGS(Q) 4.0 3.6 -- 4.8 -- Vdc Vdc Vdc 0.08 Symbol Dynamic Characteristics Min Typ 1.3 Max -- Un i t pF Two-Tone Common-source Amplifier Power Gain (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Third-order Intermodulation Distortion* (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) CRSS -- Transfer Capacitance (VDS = 26 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) (in Agere Systems Supplied Test Fixture) Functional Tests (in Supplied Test Fixture) GPS -- 15 41 -26 -10 60 -- -- -- -- -- dB % dBc dB W IM3 IRL P1dB -- -- -- -- Ruggedness (VDD = 26 V, POUT = 60 W CW, IDQ = 500 mA, f = 1880 MHz, VSWR = 10:1 [all phase angles]) Output Power at 1 dB Gain Compression (VDD = 26 V, POUT = 60 W CW, f = 1880 MHz, IDQ = 500 mA) No degradation in output power. AG R180 60E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Test Circuit Illustrations for AGR18060E R3 VGG R2 R1 FB1 C7 Z8 Z9 C8 Z10 C9 Z11 Z12 C10 Z13 C11 Z14 VDD C2 C1 C12 C13 C14 C3 Z6 1 3 DUT Z15 2 Z7 Z1 RF INPUT C5 Z2 C4 Z3 Z4 Z5 PINS 1. DRAIN 2. GATE 3. SOURCE RF OUTPUT A. Schematic Gate Gnd Drain C2 R2 R1 R3 FB1 C12 C13 C14 C3 W1 C7 C8 C10 C6 C9 C1 S2 C4 C5 2 S3 3 S4 1 C11 S1 B. Component Layout Parts List: Microstrip line: Z1 0.065 in. x 0.283 in.; Z2 0.065 in. x 0.700 in.; Z3 0.065 in. x 0.308 in.; Z4 0.856 in.x 0.262 in.; Z5 1.045 in. x 0.140 in.; Z6 0.051 in. x 0.470 in.; Z7 1.220 in. x 0.104 in.; Z8 0.998 in. x 0.422 in.; Z9 0.132 in. x 0.050 in.; Z10 0.984 in. x 0.093 in.; Z11 0.132 in. x 0.244 in.; Z12 0.289 in. x 0.332 in.; Z13 0.132 in. x 0.200 in.; Z14 0.065 in. x 0.250 in. ATC (R) B case chip capacitors: C3, C4: 10 pF, 100B100JCA500X; C11 8.2 pF 100B8R2JCA500X; C7 1000 pF, 100B102JCA500X. Kemet(R) B case chip capacitors: C9, C12: 0.10 F, CDR33BX104AKWS. Johanson Giga-Trim (R) variable capacitors: C5, C17: 0.4 pF--2.5 pF. Vitramon (R) 1206: C2, C8: 22000 pF. Murata (R) 0805: C13 0.01 F, GRM40X7R103K100AL. 0603: C14 220 pF. Fair-Rite (R) ferrite bead: FB1, #2743019447. Sprague (R) tantalum, SMT: C1, C10: 22 F, 35 V. Fixed film chip resistors: R1 510 , 1/4 W, 0.08 x 0.13; R2 560 k, 1/4 W, 0.08 x 0.13; R3 4.7 , 1/4 W, 0.08 x 0.13. PCB etched circuit boards. Taconic (R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. Figure 2. AGR18060E Test Circuit Schematic AGR 18060 E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT 0.6 Z0 = 10 IN D 90 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.6 1.8 1.4 2.0 3.0 4.0 5.0 10 20 LOA D < 0.2 0.49 OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16 0.1 ) / Yo (-jB CE ZL 0.48 0.6 -85 AN PT CE US ES 1. 0 0.2 6 0.4 4 0.0 0 -15 -80 IV CT IN DU 0.3 -75 ,O o) 5 5 0.4 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 1805 (f1) 1842.5 (f2) 1880 (f3) Note: ZS (Complex Source Impedance) 1.76 - j4.18 1.78 - j3.78 1.78 - j3.65 ZL (Complex Optimum Load Impedance) 4.65 - j2.50 4.23 - j2.44 3.84 - j2.40 ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances F 0. 32 0. 1.8 18 0 -5 -25 4 4 0. 5 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 4 Z X/ -20 0.0 3. 0 0.6 ZS R -15 0.8 f1 4.0 1. 0 f3 -10 0. 8 10 f3 f1 0.4 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 20 5.0 0. 8 0.4 10 0.1 -1 20 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN D EG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES L E OF ANG 0.2 0.2 0.3 -4 0 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0. 19 0. 31 0. 07 30 0. 43 AG R180 60E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.00 POUT, OUTPUT POWERZ(WATTS), EFFICIENCYZ(%)Z POUT EFFICIENCY IRL, INPUT RETURN Z LOSSZ(dB)Z 0.0 -5.0 IRL -10.0 -15.0 -20.0 4.50 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 PIN, INPUT POWER (WATTS)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, CW MEASUREMENT. Figure 4. Output Power and Efficiency Versus Input Power GPS, POWER GAIN (dB)Z 16 15 14 13 12 1 IDQ = 700 mA IDQ = 300 mA IDQ = 500 mA 10 POUT, OUTPUT POWER (WATTS)Z 100 VDD = 26 V, FREQUENCY = 1842.5 MHz, CW MEASUREMENT. Figure 5. Power Gain Versus Output Power GPS, POWER GAINZZ (dB)Z 16 15 14 13 12 11 10 1760 IRL -5 -10 -15 1780 1800 1820 1840 1860 1880 -20 1900 f, FREQUENCY (MHz)Z VDD = 26 V, IDQ = 500 mA, PIN = 25 dBm, CW MEASUREMENT. Figure 6. Gain and IRL Versus Signal Frequency IRL, INPUT Z RETURNZLOSS (dB)ZZ GPS 0 AGR 18060 E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) EFFICIENCY IRL IM3 GPS 1780 1800 1820 1840 1860 1880 IRL, INPUT RETURN LOSS Z (dB), IM3,Z INTERMODULATION Z DISTORTION (dBc) Z 100.00 GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY(%) Z 50 40 30 20 10 0 1760 0 -10 -20 -30 -40 -50 1900 f, FREQUENCY (MHz)Z VDD = 26 V, IDQ = 500 mA, POUT = 60 W (PEP), TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency IM3, INTERMODULATION DISTORTION (dBc) Z 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 1.00 IDQ = 500 mA IDQ = 900 mA IDQ = 300 mA IDQ = 700 mA 10.00 POUT, OUTPUT POWER (WATTS) PEPZ VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 8. Intermodulation Distortion Versus Output Power AG R180 60E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 17.00 GPS, POWER GAIN (dB)Z 16.00 15.00 14.00 13.00 12.00 1.00 IDQ = 900 mA IDQ = 700 mA IDQ = 500 mA IDQ = 300 mA 10.00 POUT, OUTPUT POWER (WATTS) PEP 100.00 VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 9. Power Gain Versus Output Power Z IMD, INTERMODULATION DISTORTION (dBc) -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 10.00 POUT, OUTPUT POWER (WATTS) PEPZ SEVENTH ORDER THIRD ORDER FIFTH ORDER 100.00 VDD = 26 V, FREQUENCY = 1842.5 MHz, IDQ = 700 mA, TWO-TONES, 100 kHz SPACING. Figure 10. Intermodulation Products Versus Output Power AGR 18060 E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 50.00 GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY (%) Z 45.00 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 1.00 600 kHz 10.00 POUT, OUTPUT POWER (WATTS)Z IRL EFFICIENCY 400 kHz 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 GPS -70.0 -80.0 -90.0 100.00 IRL, INPUT RETURN LOSS (dB), Z SPECTRAL REGROWTH (dBc)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION. Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY (%) Z 45.00 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 0.00 EVM 5.00 10.00 15.00 20.00 25.00 30.00 35.00 GPS EFFICIENCY 9 8 7 6 5 4 3 2 1 0 40.00 POUT, OUTPUT POWER (WATTS)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION. Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power EVM, ERROR VECTOR MAGNITUDEZ RMS (%)Z 50.00 10 AG R180 60E 60 W, 1805 MHz--1880 MHz, LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR18060EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR18060EU XXXX 1 3 2 2 AGR18060EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR18060EF XXXX 1 3 2 3 2 XXXX = 4 Digit Trace Code |
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