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| QS043-402-2/5 94 Dimension:mm 99.00 94.50 4x 19.05= 76.20 CL 12.62 3.81 19.05 19 18 17 16 15 14 1 5 3 21 19 20 1 2 8 9 2 6 12 13 4-O5.5 7-M4 80 19.5 7 16 17 4x O 5.50 1 89 10 11 12 13 14 15 16 17 19.5 17.5 PMB150E6 3 5 6 7 4 21 12 34 56 78 9 10 11 12 13 13 17 5 6 8 18.5 18.5 18.5 18.5 12-fasten tab #110 3.81 15.24 8.01 110.00 121.50 15 9 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 25.5 PMB150E6C ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal LABEL 20.50 14 7 17.5 34 3 4 7 8 11 12 118.11 LABEL PMB150E6 13.00 7.00 PMB150E6C , 15.50 17.00 119.60 12.62 4 4x O2.10 39.00 57.50 74 86 18 19 61.50 58.42 50.00 40.20 19.05 3.81 CL 10 11 2 14 15 18 19 20 . (kgfcm) PMB150E6 . . . PDMB150E6 ise urn-on all urn-off ime ime ime ime = 600V, = 0V = 20V,= 0V = 150A,= 15V = 5V,= 150mA = 10V,= 0V,= 1MH = = = = 300V 2.0 5.1 15V . . . . 7,500 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime = 150A,= 0V = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) 300 Fig.2- Output Characteristics (Typical) TC=25C 300 TC=125C VGE=20V 12V VGE=20V 250 12V 250 15V 11V 15V 11V Collector Current I C (A) 200 Collector Current I C (A) 200 150 10V 150 10V 100 9V 100 9V 50 50 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=60A 150A 300A IC=60A 150A 300A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 30000 100000 RL=2.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 10000 Cies VCE=300V 200V 100V 8 6 4 2 0 600 3000 Coes Cres 1000 300 0 100 200 300 400 500 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=5.1 VGE=15V TC=25C Resistive Load Switching Time t (s) Switching Time t (s) 2 1 0.5 VCC=300V IC=150A VGE=15V TC=25C Resistive Load 0.6 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (s) Switching Time t (s) tOFF tON VCC=300V RG=5.1 VGE=15V TC=125C Inductive Load 2 1 0.5 VCC=300V IC=150A VGE=15V TC=125C Inductive Load 0.1 tf tr(Ic) toff ton tf 0.2 0.1 0.05 0.01 tr(IC ) 0.001 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 16 300 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=150A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 12 VCC=300V RG=5.1 VGE=15V TC=125C Inductive Load 100 EON EOFF 8 30 EON ERR EOFF 10 4 3 ERR 0 0 50 100 150 200 250 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-5/5 300 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) TC=25C TC=125C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 250 500 IF=150A TC=25C TC=125C trr Forward Current I F (A) 200 200 150 100 100 50 50 20 IRrM 0 0 1 2 3 4 10 0 150 300 450 600 750 900 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 1000 500 200 RG=5.1 , VGE=15V, TC<125C Collector Current I C (A) 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) 1 FRD 3x10 -1 IGBT 1x10 -1 3x10 -2 1x10 -2 3x10 -3 1x10 -3 10 -5 TC=25C 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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