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| CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION Vds=25V RDS(ON)=6 m (Max.) , VGS @10V, Ids@30A RDS(ON)=9 m (Max.), VGS @4.5V, Ids@30A FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25 unless otherwise notes) Rating Drain - Source Voltage Gate -Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol VDS VGS ID IDM TA=25 TA=75 PD PD TJ / TSTG RJC 2) Value 25 20 55 100 70 42 -55 to150 1.8 50 Unit V V A A W W /W /W Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction - to -Case Thermal Resistance Junction - to Ambient Thermal Resistance (PCB mount) RJA Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 1 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET ORDERING INFORMATION Part Number CMT55N03GN252 Package TO-252 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise notes) Symbol Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistancem Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Test Conditions VGS=0V, ID=-250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=-250uA VDS=15V, ID=15A VDS=25V, VGS=0V VGS=20V , VDS=0V VDS=0V , VGS=1V at 1MHz Min. 25 1.3 - Typ. 7.5 4.5 1.9 3 Max. 9.0 6.0 3 1 100 Units V m m V S uA nA Static BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Rg Gate-Source Forward Leakage Gate Resistance 3) Dynamic Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID=20A VDS=15V VGS=5V VDD=15V ID=1A RG=6 RL=15 VGEN=10V VGS=0V VDS=15V f=1.0MHz - 16.8 6.08 4.93 15.13 4 45.27 7.6 2325.9 330.55 173.91 - nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Symbol VSD Parameter Diode Forward Voltage Max. Diode Forward Current Test Conditions IS=20A, VGS=0V Min. Typ. 0.85 Max. 1.3 20 Units V A Is Notes: Pulse test : Pulse width <300us , duty cycle <2%. 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 2 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL CHARACTERISTICS 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 3 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 4 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET PACKAGE DIMENSION TO-252 B R C E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE V 4 1 2 3 K S A U L G J H D 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 5 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 6 |
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