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Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR General Description The AP1661A is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. The AP1661A includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation. The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current. Designed with advanced BiCMOS process, the AP1661A features low start-up current, low operation current and low power dissipation. The AP1661A also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current. The AP1661A meets IEC61000-3-2 standard even at one-quadrant load and its THD is lower than 10% at high-end line voltage and full load. This IC is available in SOIC-8 and DIP-8 packages. AP1661A Features * * * * * * * * * * * Comply with IEC61000-3-2 Standard Proprietary Design for Minimum THD Zero Current Detection Control for DCM Boundary Conduction Mode Adjustable Output Voltage with Precise OverVoltage Protection Ultra-low Startup Current: 30A Typical Low Quiescent Current: 2.5mA Typical Precision Internal Reference Voltage: 1% Internal Startup Timer Disable Function for Reduced Current Consumption Totem Pole Output with 600mA Source Current and 800mA Sink Current Capability Under-voltage Lockout with 2.5V of Hysteresis Applications * * * AC-DC Adapter Off-line SMPS Electronic Ballast SOIC-8 DIP-8 Figure 1. Package Types of AP1661A Jul. 2009 Rev. 1. 0 1 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Pin Configuration AP1661A M Package (SOIC-8) P Package (DIP-8) INV COMP MULT CS 1 2 3 4 8 7 6 5 INV VCC GD GND ZCD COMP MULT CS 1 2 3 4 8 7 6 5 VCC GD GND ZCD Figure 2. Pin Configuration of AP1661A (Top View) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name INV COMP MULT CS ZCD GND GD VCC Output of the error amplifier Input of the multiplier Input of the current control loop comparator Zero current detection input. If it is connected to GND, the device is disabled Ground. Current return for gate driver and control circuits of the IC Gate driver output Supply voltage of gate driver and control circuits of the IC Function Inverting input of the error amplifier Jul. 2009 Rev. 1. 0 2 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Functional Block Diagram COMP 2 2.5V MULT 3 Multiplier 4 CS AP1661A INV 1 Voltage Regulation VCC 8 Over Voltage Detection RQ S VCC Internal R1 Supply 7V UVLO R2 Vref Zero Current Detector 7 Driver GD 2.1V 1.6V Starter Disable 5 ZCD 6 GND Figure 3. Functional Block Diagram of AP1661A Ordering Information AP1661A G1: Green Circuit Type Package M: SOIC-8 P: DIP-8 Package SOIC-8 DIP-8 Temperature Range -40 to 85oC -40 to 85oC Part Number AP1661AM-G1 AP1661AMTR-G1 AP1661AP-G1 TR: Tape and Reel Blank: Tube Marking ID 1661AM-G1 1661AM-G1 AP1661AP-G1 Packing Type Tube Tape & Reel Tube BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Jul. 2009 Rev. 1. 0 3 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Operating Supply Current Driver Output Current Input/Output of Error Amplifier, Input of Multiplier Current Sense Input Zero Current Detector Input Thermal Resistance Junction-Ambient Power Dissipation and Thermal Characteristics @ TA=50oC Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) ESD (Human Body Model) ESD (Machine Model) Symbol VCC ICC IOUT VINV, VCOMP, VMULT VCS IZCD RJA PTOT TJ TSTG TLEAD Source Sink DIP-8 SOIC-8 DIP-8 SOIC-8 -40 to150 -65 to 150 260 3000 300 Value 20 30 Unit V mA mA V V -50 10 100 150 1 0.65 W oC oC o AP1661A 800 -0.3 to 7 -0.3 to 7 mA oC/W C V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Jul. 2009 Rev. 1. 0 4 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Electrical Characteristics VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Turn-on Threshold Turn-off Threshold Hysterisis VCC Operating Range Total Supply Section Start-up Current Operating Supply Current Quiescent Current Quiescent Current VCC Zener Voltage Error Amplifier Section Voltage Feedback Input Threshold Line Regulation Input Bias Current Voltage Gain Gain Bandwidth Output Voltage Upper Clamp Voltage Lower Clamp Voltage Source Current Sink Current IINV GV GB VCOMP-H VCOMP-L ICOMP-H ICOMP-L VINV-TH VMULT ISOURCE=0.5mA ISINK=0.5mA VCOMP=4V, VINV=2.4V VCOMP=4V, VINV=2.6V -2 2.5 400 0 to 3 VMULT: 0 to 0.5V, VCOMP=Upper Clamp Voltage VMULT=1V, VCOMP=4V 0.45 VINV TA=25oC 10.3V Under Voltage Lockout Section Output Current Enable Threshold Multiplier Section Linear Input Voltage Range Output Maximum Slope Gain VCS/ VMULT k Jul. 2009 Rev. 1. 0 5 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Electrical Characteristics (Continued) VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Current Sense Section Input Bias Current Current Sense Offset Voltage Current Sense Reference Clamp Delay to Output ICS VCS-OFFSET VCS-CLAMP td(H-L) VCS =0V VMULT=0V VMULT=2.5V VCOMP=Upper Clamp Voltage, VMULT=2.5V 1.5 -0.05 30 5 1.6 175 1.7 V ns -1.0 A mV Symbol Test Conditions Min Typ Max Unit AP1661A Zero Current Detection Section Input Threshold Voltage, VZCD Rising Edge Hysteresis Voltage Upper Clamp Voltage Lower Clamp Voltage Source Current Capability Sink Current Capability Sink Bias Current Disable Threshold Disable Hysterisis Restart Current After Disable Drive Output Section Dropout Voltage VOH VOL Output Voltage Rise Time Output Voltage Fall Time Output Clamp Voltage UVLO Saturation Output Over Voltage Section OVP Triggering Current Static OVP Threshold Restart Timer Restart Timer tSTART 70 150 400 s IOVP VOVP_TH 35 2.1 40 2.25 45 2.4 A V tR tF VO-CLAMP VOS IGD-SOURCE=200mA, VCC=12V IGD-SOURCE=20mA, VCC=12V IGD-SINK=200mA, VCC=12V CL=1nF CL=1nF IGD-SOURCE=5mA, VCC=20V VCC=0 to VCC-ON, ISINK=10mA 10 2.5 2 0.9 40 40 13 3 2.6 1.9 100 100 15 1.1 V ns ns V V V VZCD-R VZCD-RTH VZCD-H VZCD-L IZCD-SR IZCD-SN IZCD-B VZCD-DIS VZCD-HYS IZCD-RES VZCD Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Jul. 2009 Rev. 1. 0 6 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Typical Performance Characteristics AP1661A 40 38 2.55 2.54 Feedback Input Threshold (V) OVP Current Threshold (A) 36 34 32 30 28 26 24 22 20 -40 2.53 2.52 2.51 2.50 2.49 2.48 2.47 2.46 2.45 -20 0 20 40 60 o 80 100 120 140 -40 -20 0 20 40 60 o 80 100 120 140 Temperature ( C) Temperature ( C) Figure 4. OVP Current Threshold vs. Temperature Figure 5. Feedback Input Threshold vs. Temperature 42 40 13.0 VCC ON 12.5 UVLO Threshold (V) 38 Startup Current (A) 36 34 32 30 28 26 12.0 11.5 11.0 10.5 VCC OFF 10.0 24 22 -40 -20 0 20 40 60 o 80 100 120 140 9.5 -40 -20 0 20 40 60 o 80 100 120 140 Temperature ( C) Temperature ( C) Figure 6. Startup Current vs. Temperature Figure 7. Under Voltage Lockout Threshold vs. Temperature Jul. 2009 Rev. 1. 0 7 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Typical Performance Characteristics (Continued) AP1661A 4.5 4.0 -0.5 Output Saturation Voltage (V) Output Saturation Voltage (V) -1.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 -1.5 -2.0 -2.5 -3.0 -3.5 0 100 200 300 400 500 Sink Current (mA) Source Current (mA) Figure 8. Output Saturation Voltage vs. Sink Current Figure 9. Output Saturation Voltage vs. Source Current 5 4 3 2 1 0 0 5 10 15 20 25 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 VCOMP=2.6V VCOMP=2.8V VCOMP=3.0V Supply Current (mA) VCOMP=3.2V VCOMP=3.5V VCS (V) VCOMP=4V VCOMP=4.5V VCOMP=5V VCOMP=MAX Supply Voltage (V) VMULT (V) Figure 10. Supply Current vs. Supply Voltage Figure 11. Multiplier Characteristics Family Jul. 2009 Rev. 1. 0 8 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 AP1661A 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 6.200(0.244) 6.600(0.260) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Note: Eject hole, oriented hole and mold mark is optional. Jul. 2009 Rev. 1. 0 9 BCD Semiconductor Manufacturing Limited Preliminary Datasheet HIGH PERFORMANCE POWER FACTOR CORRECTOR Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AP1661A 7 4.700(0.185) 5.100(0.201) 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1 5 R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jul. 2009 Rev. 1. 0 10 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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