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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1770 DESCRIPTION *High Power Dissipation *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) *Complement to Type 2SB1190 APPLICATIONS *Power amplifier applications. *TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 200 150 6 1 2 25 UNIT .cn mi e V V V A A ICM Collector Current-Peak Total Power Dissipation @ TC=25 PC Total Power Dissipation @ Ta=25 TJ Junction Temperature 1.4 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1770 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VBE(on) ICBO Base-Emitter On Voltage IC= 0.3A; VCE= 10V VCB= 200V; IE= 0 1.0 V A A Collector Cutoff Current 50 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE-1 Classifications Q 60-140 P 100-240 w ww scs .i IC= 0.1A; VCE= 10V IC= 0.3A; VCE= 10V IC= 0.1A; VCE= 10V .cn mi e 60 50 50 240 20 MHz IE= 0; VCB= 10V; ftest=1MHz 27 pF isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1770
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