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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION *High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww scs .i 1500 V 1500 V 700 V 6 V 2 A 6 A 2.5 A .cn mi e ICM Collector Current-Peak IBM Base Current-Peak Collector Power Dissipation @ Ta=25 2.5 W PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 80 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1576 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2A; VCE= 5V 6 50 1.0 2 V A mA ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product Switching times tstg Storage Time tf Fall Time ww w sem isc . IC= 0.5A; VCE= 10V; ftest= 0.5MHz .cn i 2 MHz 9.0 s IC= 2.5A , IB= 1.1A; LB= 10H 1.0 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1576
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