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Package 20275
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
Description
The PD21120R6 is a 120-watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability.
PD21120R6
Key Features
* * INTERNALLY MATCHED Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels 5 MHz, peak/avg 8.5:1 at 0.01% CCD) Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% Full Gold Metallization Integrated ESD Protection; Class 1 (minimum) Human Body Model Excellent Thermal Stability Broadband Internal Matching Low HCI Drift Capable of Handling 10:1 VSWR @ 28 V , 120 Watts (CW) Output Power
Typi cal Singl e Carrier WCDMA Perfor mance
-35 -40 Efficiency Gain 25 20 15 10 ACPR V DD = 28 V IDQ = 1.45 A f = 2170 MHz 15 20 25 5 0
-45 -50 -55 -60 0
5
10
Output Pow er (Watts )
Guaranteed Performance
WCDMA Measurements (in test fixture)
VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 5 MHz, Peak to Avg 8.5:1
Characteristic
Adjacent Channel Power Ratio Gain Drain Efficiency
Gain (dB) & Efficiency (%)
ACPR (dBc )x
Symbol
ACPR Gps iD
Min
-- 13 19
Typ
-45 14.5 22
Max
-40 -- --
Units
dB dB %
Two-Tone Measurements (in test fixture)
VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps iD IMD
Min
12.5 31 -27
Typ
14 36 -30
Max
-- -- --
Units
dB % dBc
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PD21120R6
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Quiescent Current Gate Voltage Gate Leakage Current (Guaranteed)
Conditions
VGS = 0 V, IDS = 1 A/Side VDS = 28 V, VGS = 0 V/Side VGS = 10 V, IDS = 1 A/Side VDS = 28 V, ID = 700 mA/Side VGS = 10 V, VDS = 0 V/Side
Symbol
V(BR)DSS IDSS RDS(on) VGS(Q) IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.13 3.4 --
Max
-- 1.0 -- 4 100
Units
Volts A Ohms Volts nA
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG Ri JC
Symbol
VDSS VGS TJ PD
Value
65 +15, -0.5 200 330 1.88 -40 to +150 0.55
Unit
Volts Volts C Watts W/C C C/W
Typical Performance
Broa dba nd Li ne arity Perfor mance
40 0 Efficiency IRL Gain V DD = 28 V, IDQ = 1.2 A POUT = 120 W PEP 2120 2140 2160 IM3 -5 -10
-40
IMD vs. Output Pow er (PEP)
-30 V DD = 28 V, f = 2170 MHz -Tone Spacing = 100 kHz IDQ = 1.6 A -50 IDQ = 1.4 A IDQ = 1.2 A -60 IDQ = 1.0 A
Gain (dB) & Efficiency (%)
35 30 25 20 15 10 5
-20 -25 -30 -35 -40 2200
0 2100
IMD (dBc ) x
IRL & IMD
-15
2180
-70 1 10 100 1000
Freque nc y (MHz)
Output Pow er (Watts PEP)
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PD21120R6
Typical Performance
(cont.)
IMD vs. Output Pow er Efficiency
-20 -30 V DD = 28 V IDQ = 1.2 A Efficiency IM3 40 32 24 16 8 0 140
Pow er Gain vs. Output Pow er
15
IMD dBc
-40 -50 -60 -70 0 20 40 60 80 100
Power Gain (dB)
14 13 12 11 10 1 10 100 1000 IDQ = 1.2 A IDQ = 1.0 A V DD = 28 V IDQ = 1.6 A IDQ = 1.4 A
IM5 IM7
120
Output Pow er (Watts -PEP)
Output Pow er (Watts CW)
Gate-Source Voltage vs. Case Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
Capa citance vs. Suppl y Voltage (per side ) *
180 160 30 Cgs V GS = 0 V f = 1 MHz Cds Cdg 0 10 20 30 40 25
Bias Voltage (V)
Cds & Cgs (pF)x
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 0.80 3.07 5.33 7.60 9.87 12.13 130
140 120 100 80 60 40 20 0
15 10 5 0
Case Temperature (C)
Supply Voltage (Volt s) * This part is internally matched. Measurements of the finished product will not yield these results.
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Cdg (pF) x
20
PD21120R6
Broadband Circuit Impedance
VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Z0 = 50 i
Z Source
G G
D S
Z Load
D
Frequency
MHz 2100 2110 2140 2170 2200
Z Source i
R 5.2 5.0 4.9 4.8 4.7 jX -6.58 -6.62 -6.73 -6.85 -7.10
Z Load i
R 2.52 2.48 2.56 2.62 2.72 jX -7.6 -6.8 -6.2 -5.78 -5.17
Test Circuit
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PD21120R6
Test Circuit
(cont.)
Test Circuit Schematic for 2170 MHz DUT i 1, i 21 i2 i3 i 4, i 14 i 5, i 7 i 6, i 8 i 9, i 15 i 10, i 16 i 11, i 17 i 12, i 18 i 13 i 19 i 20 PTF 102003 0.02 2170 MHz @ 0.07 2170 MHz @ 0.26 2170 MHz @ 0.50 2170 MHz @ 0.03 2170 MHz @ 0.08 2170 MHz @ 0.04 2170 MHz @ 0.06 2170 MHz @ 0.26 2170 MHz @ 0.02 2170 MHz @ 0.42 2170 MHz @ 0.27 2170 MHz @ 0.05 2170 MHz @ LDMOS Transistor Microstrip 29.20 i Microstrip 50 i Microstrip 20.10 i Microstrip 15.50 i Microstrip 13.10 i Microstrip 6.80 i Microstrip 5.50 i Microstrip 13.10 i Microstrip 53.60 i Microstrip 10.40 i Microstrip 53.60 i Microstrip 20.10 i Microstrip 50 i C1, C5, C8, C13 C2, C3, C7, C9, C6 C4 C12 C14 Capacitor, 10 F, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR Capacitor, 6.8 pF, 100A 6R8 Capacitor, 1.6 pF, ATC 600B 1R6 BW Capacitor, 5.6 pF, 100B 5R6 Capacitor, 0.1 F, 50 V, Digi-Key PCC103BCT Capacitor, 3.3 pF, ATC 600B 3R3 BW Connector, SMA Female, Panel Mount Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal
C10, C11 J1, J2 R1, R4 R2, R3 PCB
Assembly Diagram (not to scale)
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PD21120R6
Case Outline Specifications Case 20275
Peak Devices, Inc 2100 Central Ave, Suite 200 Boulder, Co 80301
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