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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD950 DESCRIPTION *With TO-3 package *Built-in damper diode *High voltage capability APPLICATIONS *Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 4.5 42 130 -65~130 UNIT V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500m A;IC=0 IC=2 A;IB=0.75 A IC=2 A;IB=0.75 A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 VF tf ts DC current gain DC current gain Diode forward voltage Fall time IC=2A;IBend=0.75A;LB=10H Storage time 11 IC=1A ; VCE=5V IC=2A ; VCE=10V IF=4A 8 3 MIN 5 TYP. 2SD950 MAX UNIT V 5.0 1.5 50 1.0 V V A mA 1.7 0.9 V s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD950 Fig.2 Outline dimensions 3 |
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