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TPCA8021-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8021-H
High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications
6.00.3 0.50.1 8 1.27 0.40.1 5
Unit: mm
0.05 M A
* * * * * * *
Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.9nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.8 m (typ.) High forward transfer admittance: |Yfs| =46 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
5.00.2
0.150.05
1 5.00.2 0.950.05
4
0.595 A 0.1660.05
S 1
0.05 S 4 1.10.2
0.60.1
4.250.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 30 30 20 27 81 45 2.8
Unit V V V A W W
8 5 0.80.1
1,2,3SOURCE 5,6,7,8DRAIN
4GATE
JEDEC JEITA TOSHIBA
2-5Q1A
Pulsed (Note 1)
Drain power dissipation (Tc=25) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) Channel temperature Storage temperature range
Weight: 0.068 g (typ.)
1.6
W
Circuit Configuration
8 7 6 5
95 27 2.7 150 -55 to 150
mJ A mJ C C
EAR Tch Tstg
1
2
3
3.50.2
Maximum Ratings (Ta = 25C)
4
Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care.
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TPCA8021-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8021-H
*
Type Lot No.
Note 1:
The channel temperature should not exceed 150C during use. (b) Device mounted on a glass-epoxy board (b)
Note 2: (a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.1 mH, RG = 25 , IAR = 27 A Note 4: Repetitive rating: pulse width limited by max. channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCA8021-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 27 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 ID = 14A VOUT RL = 1.1 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 14 A VDS = 10 V, ID = 14 A Min 30 15 1.1 23 Typ. 9.5 6.8 46 1395 140 525 5 11 10 31 23 13 4.5 4.9 6.9 Max 10 10 2.3 13 9 ns nC pF Unit A A V V m S
VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V, ID = 27 A - VDD 24 V, VGS = 5 V, ID = 27 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 27 A, VGS = 0 V Min Typ. Max 81 -1.2 Unit A V
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TPCA8021-H
ID - VDS
20 10 8 6 4 3.5 4.5 5 3.3 3.2 50 8 6 40 10 4.5 5 4
ID - VDS
3.9 Common source Ta = 25C Pulse test 3.7 3.5 30 3.3 20
16
Drain current ID (A)
12
Common source Ta = 25C Pulse test
8 3 4 2.8 VGS = 2.6V 0 0 0.2 0.4 0.6 0.8 1
Drain current ID (A)
10
3 VGS = 2.8V
0 0
0.4
0.8
1.2
1.6
2
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
50
VDS - VGS
0.5
40
Drain-source voltage VDS (V)
Common source VDS = 10 V Pulse test
Common source Ta = 25C Pulse test
0.4
Drain current ID (A)
30
0.3
20 Ta = -55C 10 100 25
0.2
ID = 27 A
0.1
14
7 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID (S)
100 100 Common source Ta = 25C Pulse test
RDS (ON) - ID
Forward transfer admittance |Yfs|
10
Ta = -55C 25
Drain-source ON-resistance RDS (ON) (m)
100 1
10
4.5
VGS = 10 V
Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100
1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
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2006-01-17
TPCA8021-H
RDS (ON) - Ta
20 Common source Pulse test 100
IDR - VDS (A) Drain reverse current IDR
Drain-source ON-resistance RDS (ON) (m)
16 14A 12 VGS = 4.5 V 8
ID = 27A
10 3 10 4.5
7A
4 VGS = 10 V 0 -80
ID = 7A,14A,27A
Common source Ta = 25C Pulse test 1 0
1 VGS = 0 V
-40
0
40
80
120
160
-0.2
-0.4
-0.6
-0.8
-1.0
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta
(V) Gate threshold voltage Vth
(pF)
Ciss 1000 Coss
2
Capacitance C
1.5
1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160
100
Common source VGS = 0 V f = 1 MHz Ta = 25C
Crss
10 0.1
1
10
100
Drain-source voltage VDS
(V)
Ambient temperature
Ta
(C)
Dynamic input/output characteristics
50 Common source 20
Drain-source voltage VDS (V)
ID = 27 A 40 Ta = 25C Pulse test 30 VDS 20 24 V VDD = 6 V 12 V
16
12
8
10
4
0 0
8
16
24
32
0 40
Total gate charge Qg
(nC)
Gate-source voltage VGS
(V)
5
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TPCA8021-H
rth - tw rth (C/W)
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc=25 (1) (2)
Transient thermal impedance
10
(3) 1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
PD - Ta
3 (1)
(1)Device mounted on a glass-epoxy (2)Device mounted on a glass-epoxy board(b) 10s (Note 2b)
PD - Tc
50
(W)
2.5
(W) Drain power dissipation PD
160 40 30 20 10 120 0
board(a)
(Note 2a)
Drain power dissipation PD
2 (2) 1.5
1
0.5
0 0
40
80
0
40
80
120
160
Ambient temperature Ta
(C)
Case temperature
TC
(C)
Safe operating area
100 ID max (Pulse) * t =1ms * 10ms *
Drain current ID (A)
ID max (Continuous) 10
DC Operation Tc = 25 1
* Single - pulse Ta = 25
Curves must be derated linearly with increase in temperature.
0.1 0.1
VDSS max 10 100
1
Drain-source voltage VDS
(V)
6
2006-01-17
TPCA8021-H
7
2006-01-17

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