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PD - 96231
IRLB8748PBF
Applications
l l l
HEXFET(R) Power MOSFET
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial use
VDSS
30V
RDS(on) max
4.8m:
D
Qg
15nC
G
D
S
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free
TO-220AB IRLB8748PBF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current
Max.
30 20 92f 65 78 370 75 38 0.5 -55 to + 175
Units
V
A
h Maximum Power Dissipation h
Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
c
W W/C C
i
300 (1.6mm from case) 10 lbfyin (1.1Nym)
Thermal Resistance
RJC RCS RJA Junction-to-Case
h
Parameter
Typ.
--- 0.5 ---
Max.
2.0 --- 62
Units
C/W
Case-to-Sink, Flat Greased Surface Junction-to-Ambient g
Notes through are on page 9
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1
04/22/09
IRLB8748PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 196 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 21 3.8 5.5 1.8 -7.1 --- --- --- --- --- 15 3.6 2.2 5.9 3.9 8.1 11 2.0 14 96 16 34 2139 464 199 --- --- 4.8 V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 40A m 6.8 VGS = 4.5V, ID = 32A 2.35 V VDS = VGS, ID = 50A --- mV/C VDS = 24V, VGS = 0V 1.0 A 150 VDS = 24V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 15V, ID = 32A
e e
23 --- --- --- --- --- --- 3.5 --- --- --- --- --- --- --- Typ. --- --- --- nC ns nC
VDS = 15V VGS = 4.5V ID = 32A
VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5Ve ID = 32A RG = 1.8 VGS = 0V VDS = 15V = 1.0MHz Max. 114 32 7.5 Units mJ A mJ
pF
Avalanche Characteristics
--- --- --- --- --- --- --- --- 23 39
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
92f A 370 1.0 35 59 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 32A, VGS = 0V TJ = 25C, IF = 32A, VDD = 15V di/dt = 200A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLB8748PBF
1000
TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
1000
TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
3.0V 10
10
3.0V
60s PULSE WIDTH
Tj = 175C 1
60s PULSE WIDTH
1 0.1 1 Tj = 25C 10 100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
ID, Drain-to-Source Current (A)
ID = 40A VGS = 10V
100 T J = 175C 10
1
T J = 25C VDS = 15V 60s PULSE WIDTH
0.1 1 2 3 4 5 6 7 8
-60 -40 -20 0 20 40 60 80 100120140160180 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLB8748PBF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 ID= 32A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
VDS= 24V VDS= 15V
C, Capacitance (pF)
Ciss 1000 Coss
Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100sec 100 1msec 10msec 10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10 100
10 T J = 25C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLB8748PBF
100 Limited By Package 80
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
2.5
2.0
60
1.5 ID = 50A 1.0
40
20
ID = 250A ID = 1.0mA
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) C/W
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
1.55246
i (sec)
0.005303 8.250407 6.932919 0.000317
0.00682 0.00172 0.43999
1
2
3
4
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLB8748PBF
RDS(on), Drain-to -Source On Resistance (m )
18 ID = 40A 16 14 12 10 8 6 4 2 4 6 8 10 T J = 125C
EAS , Single Pulse Avalanche Energy (mJ)
500 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) ID 6.73A 11.6A BOTTOM 32A TOP
T J = 25C
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy vs. Drain Current
RD
15V
V DS
VDS L
DRIVER
V GS RG
D.U.T.
+
RG
20V VGS
D.U.T
IAS tp
+ V - DD
-V DD
A
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.01
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 14a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
I AS
Fig 13b. Unclamped Inductive Waveforms
Fig 14b. Switching Time Waveforms
6
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IRLB8748PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16. Gate Charge Test Circuit
Fig 17. Gate Charge Waveform
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IRLB8748PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB8748PBF
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA GPUA8P9@A A DIU@SI6UDPI6G (A! S@8UDAD@S GPBP 96U@A8P9@ @6SAA2A! X@@FA GDI@A8 ( Q6SUAIVH7@S &'(
6TT@H7G@9APIAXXA
DIAUC@A6TT@H7GAGDI@AA8A
Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA
6TT@H7G GPUA8P9@
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. Starting TJ = 25C, L = 0.22mH, RG = 25, IAS = 32A. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 78A.
For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. This is only applied to TO-220AB pakcage.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009
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