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| Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 INNER INSULATED TYPE TRIAC ( II TO - 220 PACKAGE) Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maximum Ratings=25ae(c) Ta Operating T stg Storage Temperature----------------------- - 40~125ae Tj Junction Temperature -------------------- 40~125ae PGMPeak Gate Power Dissipation---------------------- 5W VDRM Repetitive Peak Off-State Voltage--------------------600V IT RMS(c) .M.S On-State Current R Ta=89ae(c) ------------------ 8A VG M Peak Gate Voltage ---------------------10V I G M P e a k G a t e C u r r e n t - - - - - - - - - - - - - - - - - - - - 2.0A ITSMSurge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)- - - -80/88A - --VISO RMS Isolation Breakdown Voltage---- - ------------2500V Electrical Characteristics=25ae Ta (c) Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Currentn(c) Gate Trigger Currento(c) Gate Trigger Currento(c) Gate Trigger Voltagen(c) Gate Trigger Voltageo(c) Gate Trigger Voltageo(c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Thermal Resistance Holding Current 0.2 10 3.7 15 Min. Max. 2.0 1.4 30 30 30 1.5 1.5 1.5 Unit mA V mA mA mA V V V V V/S ae /W mA Conditions VD=VDRM, Single Phase,Half Wave, TJ=125ae IT=12A, Inst. Measurement VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm VD =6V, RL =10 ohm T J=125ae D =1/2VDRM ,V TJ=125ae ,VD=2/3VDRM (di/dt)c=-4.0A/ms Junction to case Symbol IDRM VTM I+GT1 I- GT1 I-GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c Rth(j-c) IH Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 Fig 2. On-State Voltage Performance Curves Fig 1. Gate Characteristics Gate Voltage (V) 10 1 0.1 101 102 103 Gate Current (mA) On-state Current [A] On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Temperature Fig 4. On State Current vs. Maximum Power Dissipation Junction Temperature [ae ] Fig 5. On State Current vs. Allowable Case Temperature Power Dissipation [W] RMS On-State Current [A] Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Allowable Case Temp. [a C] Surge On-state Current [A] 100 101 102 RMS On-State Current [A] Time Cycles(c) Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 Fig 8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature Transient Thermal Junction Temperature [ae ] Impedance [ae ] /W Time (c) sec Fig 9. Gate Trigger Characteristics Test Circuit 10 | 10 | 10 | Test Proceduren Test Procedureo Test Procedureo |
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