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 BUK7510-100B
N-channel TrenchMOS standard level FET
Rev. 03 -- 14 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 C; Tj 175 C VGS = 10 V; Tmb = 25 C; see Figure 1; see Figure 3 Tmb = 25 C; see Figure 2
[1]
Min -
Typ -
Max Unit 100 75 300 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Figure 12 8.6 10 m
Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup 100 V; drain-source RGS = 50 ; VGS = 10 V; avalanche energy Tj(init) = 25 C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 C; see Figure 13 629 mJ
Dynamic characteristics QGD 22 nC
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
[1]
Continuous current is limited by package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
123
SOT78A (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK7510-100B TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
2 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 C; VGS = 10 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C ID = 75 A; Vsup 100 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C; unclamped
[1] [2] [1] [2] [2]
Limiting values
Conditions Tj 25 C; Tj 175 C RGS = 20 k
Min -20 -55 -55 -
Typ -
Max 100 100 20 110 75 75 438 300 175 175 110 75 438 629
Unit V V V A A A A W C C A A A mJ
Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 2
Source-drain diode
Avalanche ruggedness
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
3 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
120 ID (A) 80
03ng70
120 Pder (%) 80
03na19
Capped at 75 A due to package
40
40
0
0
50
100
150
Tmb (C)
200
0
0
50
100
150
Tmb (C)
200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
103 ID (A) 102 Limit RDSon = VDS/ID
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
02ng68
tp = 10 s 100 s 1 ms DC 10 ms 100 ms
10
Capped at 75 A due to package
1
1
10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
4 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 Min Typ Max 0.5 Unit K/W
Rth(j-a)
vertical in still air
-
60
-
K/W
1 Zth(j-mb) (K/W) 10-1
03ng69
= 0.5 0.2 0.1 0.05
10-2
0.02
P
=
tp T
Single Shot 10-3 10-6
tp
t T
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
5 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 100 V; VGS = 0 V; Tj = 175 C VDS = 0 V; VGS = 20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Figure 12 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from contact screw on mounting base to centre of die SOT78 ; Tj = 25 C from drain lead 6 mm from package to centre of die ; Tj = 25 C LS internal source inductance source-drain voltage reverse recovery time recovered charge from source lead to source bond pad ; Tj = 25 C IS = 40 A; VGS = 0 V; Tj = 25 C; see Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V; Tj = 25 C VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 ; Tj = 25 C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 14 ID = 25 A; VDS = 80 V; VGS = 10 V; Tj = 25 C; see Figure 13 80 18 22 5080 677 168 33 45 120 36 3.5 4.5 7.5 6773 812 230 nC nC nC pF pF pF ns ns ns ns nH nH nH Min 100 89 1 2 Typ 3 0.02 2 2 8.6 Max 4 4.4 1 500 100 100 25 10 Unit V V V V V A A nA nA m m
Static characteristics
Source-drain diode VSD trr Qr 0.85 69 212 1.2 V ns nC
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
6 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
350 ID (A) 300 250 200
03ng76
10 8
20
7 6.5
11 RDSon (m) 10
03ng75
5.5 150 100 50 0
9
8 VGS = 4.5 V 0 2 4 6 8 10 7 5 10 15 20
VDS (V)
VGS (V)
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
03aa35
Fig 6.
Drain-source on-state resistance as a function of gate-source voltage; typical values
03ng73
10-1 ID (A) 10-2
min
typ
max
100 gfs (S) 80
10-3
60
10-4
40
10-5
20
10-6
0
2
4
VGS (V)
6
0
0
20
40
60
ID (A)
80
Fig 7.
Sub-threshold drain current as a function of gate-source voltage
Fig 8.
Forward transconductance as a function of drain current; typical values
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
7 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
100 ID (A) 80
03ng74
5 VGS(th) (V) 4 max
03aa32
60
3
typ
40 Tj = 175 C 20 Tj = 25 C 0 0 2 4 VGS (V) 6
2
min
1
0 -60
0
60
120
Tj (C)
180
Fig 9.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
03ng77
Fig 10. Gate-source threshold voltage as a function of junction temperature
2.8 a
03ng41
13 RDSon (m) 12 7 11 8 6.5
VGS = 6 V
9 10
2.1
1.4
10
9
0.7
8
0
50
100
150
ID (A)
200
0 -60
0
60
120
Tj (C)
180
Fig 11. Drain-source on-state resistance as a function of drain current; typical values
Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
8 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
10 VGS (V) 8 VDD = 14 V
03ng72
7000 C (pF) 6000 5000
03ng78
Ciss
6
VDD = 80 V 4000 3000 2000
Coss
4
2 1000 0 0 10-1
Crss
0
20
40
60
QG (nC)
80
1
10
VDS (V)
102
Fig 13. Gate-source voltage as a function of gate charge; typical values
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
03ng71
100 IS (A) 80
60
40
20 Tj = 175 C 0 Tj = 25 C 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical value
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
9 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14
Fig 16. Package outline SOT78A (TO-220AB)
BUK7510-100B All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
10 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history Release date 20100414 Data sheet status Product data sheet Change notice Supersedes BUK75/7610_100B_2 (9397 750 10281) Document ID BUK7510-100B_3 Modifications:
* * *
BUK7510-100B_3 has been separated from data sheet BUK75/7610-100B_2. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet 9397 750 09496
BUK75/7610_100B_2 (9397 750 10281)
20020919
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
11 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use in automotive applications -- This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
12 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 -- 14 April 2010
13 of 14
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 April 2010 Document identifier: BUK7510-100B


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