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A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.70 @ VGS= 10V N-CH 100V 2.9nC 0.90 @ VGS= 6.0V 1.00 @ VGS= -10V P-CH -100V 3.5nC 1.45 @ VGS= -6.0V -0.7A 0.9A -0.9A ID TA= 25C 1.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features * 2 x N + 2 x P channels in a SOIC package P1D/N1D P2D/N2D Applications * * DC Motor control DC-AC Inverters N1G N2G N1S/N2S Ordering information Device ZXMHC10A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 10A07 Issue 1.0 - March 2009 (c) Diodes Incorporated 1 www.diodes.com ZXMHC10A07N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25C @ VGS= 10V; TA=70C @ VGS= 10V; TA=25C @ VGS= 10V; TL=25C Pulsed Drain current @ VGS= 10V; TA=25C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 100 20 1.00 0.80 0.80 0.81 Pchannel -100 20 -0.85 -0.68 -0.68 -0.69 -3.64 -0.60 -3.64 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 4.30 0.70 4.30 0.87 6.94 1.36 10.9 0.90 7.19 A A A W mW/C W mW/C W mW/C C Continuous Source current (Body diode) at TA =25C Pulsed Source current (Body diode) at TA =25C Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TL =25C Linear derating factor (a) (b) (f) (c) Operating and storage temperature range -55 to 150 Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. Same as note (a), except the device is measured at t 10 sec. Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die. Symbol (a) (b) (d) (e) Value 144 92 106 254 139 Unit C/W C/W C/W C/W C/W RJA RJA RJA RJA RJL (f) (b) (c) (d) (e) (f) Issue 1.0 - March 2009 (c) Diodes Incorporated 2 www.diodes.com ZXMHC10A07N8 Thermal characteristics 10 RDS(ON) 10 RDS(ON) 1 DC -ID Drain Current (A) ID Drain Current (A) Limited Limited 1 DC 1s 100ms Note (a) 10ms 1ms 100us 100m 1s 100m 100ms 10ms Note (a) Single Pulse, T amb=25C 1ms 100us 10m 1 10m 1 Single Pulse, T amb=25C 10 100 10 100 VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) N-channel Safe Operating Area 140 120 100 80 60 40 20 0 100 1m 10m 100m 1 D=0.2 Single Pulse D=0.05 D=0.1 D=0.5 P-channel Safe Operating Area 1.0 Max Power Dissipation (W) Thermal Resistance (C/W) One Active Die 25 x 25mm 1oz Any one active die 0.5 0.0 0 25 50 75 100 125 150 10 100 1k Pulse Width (s) Temperature (C) Transient Thermal Impedance 100 One Active Die Single Pulse T amb=25C Derating Curve Maximum Power (W) 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Issue 1.0 - March 2009 (c) Diodes Incorporated 3 www.diodes.com ZXMHC10A07N8 N-channel electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 1.6 2.0 100 0.5 V A nA V S ID = 250A, VGS= 0V VDS= 100V, VGS= 0V VGS= 20V, VDS= 0V ID= 250A, VDS= VGS VGS= 10V, ID= 1.5A VGS= 6.0V, ID= 1.0A VDS= 15V, ID= 1.0A 100 4.0 0.7 0.9 Dynamic Capacitance (c) Input capacitance Output capacitance Reverse transfer capacitance Switching (b) (c) Ciss Coss Crss 138 12 6 pF pF pF VDS= 60V, VGS= 0V f= 1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge (c) td(on) tr td(off) tf 1.8 1.5 4.1 2.1 ns ns ns ns VDD= 50V, VGS= 10V ID= 1.0A RG 6.0, Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time (a) (c) (c) Qg Qgs Qgd 2.9 0.7 1.0 nC nC nC VDS=50V, VGS= 10V ID= 1.0A VSD trr Qrr 27 12 0.95 V ns nC IS= 1.5A, VGS= 0V IS= 1.8A, di/dt= 100A/s Reverse recovery charge NOTES: (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue 1.0 - March 2009 (c) Diodes Incorporated 4 www.diodes.com ZXMHC10A07N8 N-channel typical characteristics T =25 C 10V 7V T =150 C 10V 7V ID Drain Current (A) 1 5V ID Drain Current (A) 6V 6V 5V 4.5V 1 0.1 4.5V VGS 0.1 4V VGS 3.5V 0.01 4V 0.01 0.1 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) 1 10 Output Characteristics 2.0 Normalised RDS(on) and VGS(th) 1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 T =150 C Output Characteristics ID Drain Current (A) VGS =10V ID =1.5A R DS(on) 0.1 T =25 C VGS(th) VGS =VDS ID =250uA VDS =10V 0.01 3 4 5 6 0 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature ( C) Typical Transfer Characteristics 10 RDS(on) Drain-Source On-Resistance () Normalised Curves v Temperature 10 ISD Reverse Drain Current (A) 4.5V 5V 6V VGS T =150 C 1 1 7V 10V T =25 C T =25 C 0.1 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 On-Resistance v Drain Current ID Drain Current (A) VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage Issue 1.0 - March 2009 (c) Diodes Incorporated 5 www.diodes.com ZXMHC10A07N8 N-channel typical characteristics -continued 200 10 VGS Gate-Source Voltage (V) 180 C Capacitance (pF) 160 140 120 100 80 60 40 20 0 1 10 CISS COSS VGS =0V f =1MHz ID =1.0A 8 6 4 2 0 0.0 VDS =50V CRSS 100 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge Test circuits Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VDD 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit Issue 1.0 - March 2009 (c) Diodes Incorporated 6 www.diodes.com ZXMHC10A07N8 P-channel electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 1.2 -2.0 -100 -0.5 V A nA V S ID = -250A, VGS= 0V VDS= -100V, VGS= 0V VGS= 20V, VDS= 0V ID= -250A, VDS= VGS VGS= -10V, ID= -0.6A VGS= -6.0V, ID= -0.5A VDS= -15V, ID= -0.6A 100 -4.0 1.0 1.45 Dynamic Capacitance (c) Input capacitance Output capacitance Reverse transfer capacitance Switching (b) (c) Ciss Coss Crss 141 13.1 10.8 pF pF pF VDS= -50V, VGS= 0V f= 1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge (c) td(on) tr td(off) tf 1.6 2.1 5.9 3.3 ns ns ns ns VDD= -50V, VGS= -10V ID= -1.0A RG 6.0 Total Gate charge Gate-Source charge Gate-Drain charge Source-Drain diode Diode forward voltage Reverse recovery time (a) (c) (c) Qg Qgs Qgd 3.5 0.6 1.6 nC nC nC VDS= -50V, VGS= -10V ID= -0.6A VSD trr Qrr -0.85 29 31 -0.95 V ns nC IS= -0.7A, VGS= 0V IS= -0.9A, di/dt= 100A/s Reverse recovery charge NOTES: (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue 1.0 - March 2009 (c) Diodes Incorporated 7 www.diodes.com ZXMHC10A07N8 P-channel typical characteristics 10 T = 25C 10V 7V 10 T = 150C 10V 7V 5V 4.5V 4V 3.5V 3V -VGS 5V 4.5V 4V -ID Drain Current (A) 1 -ID Drain Current (A) 1 0.1 3.5V 0.1 0.01 -VGS 0.01 1E-3 0.1 1 10 1E-3 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics 2.2 Normalised RDS(on) and VGS(th) Output Characteristics VGS = -10V ID = - 0.6A RDS(on) -ID Drain Current (A) 1 T = 150C T = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 0.1 VGS(th) VGS = VDS ID = -250uA -VDS = 10V 0.01 3 -VGS 4 5 50 100 150 Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 3.5V -VGS 4V 4.5V 5V Normalised Curves v Temperature 10 100 -ISD Reverse Drain Current (A) T = 25C T = 150C 1 10 7V 10V T = 25C 0.1 1 0.01 0.1 1 10 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -ID Drain Current (A) -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current Issue 1.0 - March 2009 (c) Diodes Incorporated 8 www.diodes.com ZXMHC10A07N8 P-channel typical characteristics -continued 10 200 C Capacitance (pF) VGS = 0V f = 1MHz CISS COSS CRSS -VGS Gate-Source Voltage (V) ID = -0.6A 8 6 4 2 VDS = -50V 150 100 50 0 0.1 1 10 100 0 0 1 2 3 4 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge Test circuits Current regulator QG 12V 0.2 F 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VDD 10% VGS tr t(on) td(off) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% Switching time waveforms Switching time test circuit Issue 1.0 - March 2009 (c) Diodes Incorporated 9 www.diodes.com ZXMHC10A07N8 Packaging details - SO8 DIM Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050 Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27 DIM Inches Min. Max. Millimeters Min. Max. A A1 D H E L 0.053 0.004 0.189 0.228 0.150 0.016 e b c - 0.050 BSC 0.013 0.008 0 0.020 0.010 8 - 1.27 BSC 0.33 0.19 0 0.51 0.25 8 - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1.0 - March 2009 (c) Diodes Incorporated 10 www.diodes.com ZXMHC10A07N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com Issue 1.0 - March 2009 (c) Diodes Incorporated 11 www.diodes.com |
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