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| 1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-231444x Description KLT-231444x is long wavelength distributed feedback(DFB) laser diode(LD) sources in TO-56 package with flat window or ball lens or aspherical lens cap. KLT-231444x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output monitoring. It operates at 1310nm wavelength band and with data rates of 1.25 Gbps. It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional module. FEATURES High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap High reliability and environmental endurance Operating wavelength of 1.3 m band Operating temperature range from -20C to 85C Data rates of 1.25Gbps APPLICATIONS SONET OC-24/SDH STM-8 1.25Gbps Gigabit Ethernet Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module Absolute Maximum Ratings Parameter Operating temperature Storage temperature Peak laser forward current Peak laser reverse voltage Peak forward monitor PD current Peak reverse monitor PD voltage Symbol Top Tstg If Vrl Ifp Vrp Min -20 -40 Max 85 100 150 2 2 10 unit o C o C mA V mA V Optical and Electrical Characteristics (Top = 25C otherwise specified) Parameter Threshold current Rated output power Operating current Operating voltage Slope efficiency Center wavelength Side mode suppression ratio Optical rise and fall time Monitor PD current Monitor PD dark current Monitor PD capacitance Symbol Ith Pf Iop Vop c SMSR tr tf Im Id Ct 0.25 0.15 1290 30 Min Typ 7 23 5 23 50 1.1 0.35 0.2 1310 40 0.1 0.1 0.25 10 Test Conditions CW mA CW, Top = 85C mW CW, kink free 35 at rated Po=5mw mA 70 at rated Po=5mw, Top=85C 1.5 V at rated Po=5mw CW,Po=5mw mW/mA CW,Po=5mw,Top = 85C nm at rated Po=5mw 1330 dB at rated Po=5mw ns 20 to 80%, I b = Ith 0.2 0.2 ns 80 to 20%, I b = Ith mA at rated Po=5mw , Vrp = 1V 0.1 A Vrp = 10V 20 pF Vrp = 10V, 1MHz Max 15 40 Unit 0.05 Note: The engineering spec can be revised without any previous notice. 1/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev.002 1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN KLT-231444x Outline Drawing Pin connections Pin config. pin no. 1 pin no. 2 pin no. 3 pin no. 4 4G case ground/LD anode LD cathode Monitor PD cathode Monitor PD anode 4S Case ground LD cathode Monitor PD anode LD anode/m-PD cathode 4R case ground/LD anode m-PD anode m-PD cathode LD cathode Ordering information KLT Device Type 1 : FP(BH) 2 : DFB Wavelength 31 : 1310 nm 55 : 1550 nm xx:1xx0nm 3nm(CWDM) yB(band):O,E,S,C,L,NI,NC Data Rate Operating Temp. Package type Pin Config. Kodenshi LD TO 4 : 1.25 Gbps 2 : -20~70 5 : 2.5 Gbps 4 : -20~85 5 : -40~85 3 : CWDM-DFB 49 : 1490 nm 4 : AR LD 1 : 1.5 mm ball lens S : 4S type 2 : 2.0mm ball lens G : 4G type 3 : flat window R : 4R type 4 : aspheric lens 3: 3G 2/2 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Rev.002 |
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