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| Photodiode-Chip Preliminary Wavelength range Red, selective 860 800 720 EPC-660-0.9 11.04.2007 Type Integrated filter Technology AlGaAs/GaAs rev. 07/07 Electrodes P (anode) up typ. dimensions (m) typ. thickness 260 m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m Description red-selective photodiode with narrow response range (660 nm peak) Applications Optical communications, safety equipment, light barriers PD-03 Miscellaneous Parameters Tamb = 25C, unless otherwise specified Parameter Active area Operating temperature range Storage temperature range Test onditions Symbol A Tamb Tstg Value 0.62 -40 to +125 -40 to +125 Unit mm C C Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions VR = 0 V Peak sensitivity Spectral range at 50 % Responsivity at P1 Responsivity at P2 Spectral bandwidth at 50% Dark current Junction capacitance Switching time 1 2 Symbol P 0.5 S S 0,5 ID CJ tr, tf Min Typ 660 Max Unit nm VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 1 V VR = 0 V VR = 1 V 620 0.2 0.42 80 40 40 40 700 nm A/W A/W nm 300 pA pF ns Measured on bare covered chip on TO-18 header Measured on epoxy covered chip on TO-18 header Labeling Type EP-660-0.9 Typ. ID [pA] Typ. S[A/W] Lot N Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip Preliminary 11.04.2007 EPC-660-0.9 rev. 07/07 Typical responsivity spectrum 1,0 0,8 0,6 0,4 0,2 0,0 500 550 600 650 700 750 800 Sensitivity (arb. units) Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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